In theory A diode clamps 0.7 volts across it but in practice the number is not exactly 0.7 volts because it can not be controlled. This is only the case with Silicon Diodes (clamping 0.7 volts), as Germanium ones, ideally clamp 0 Volts, but in practice it is not exactly Zero. Basically, in practice it is not exactly 0.7 volts but when doing theory one assumes it to be 0.7volts for ease of operation.
No, the diode is physically rated to only 75 Amps, at voltages up to 1000V. Its not a power factor thing, the top limit is 75 Amps.
gunn diode is transfered electron device & PIN diode is semiconductor device
whether we know that p-n diode is real diode. But still in case of semeconductor we see then silics is real diode.
Bulk resistance of diode depends on how it is biased. The bulk resistance of a diode is the approximate resistance of the diode when it is forward biased.
Zenor diode is allow to flow current in forward direction and it can also allow current in reverse direction when the voltage is above the certain value.
voltage regulation
Susanne Zenor was born on November 26, 1947.
Susanne Zenor was born on November 26, 1947.
William T. Zenor was born in 1846.
William T. Zenor died in 1916.
Richard Zenor has written: 'Agasha, master of wisdom' -- subject(s): Spirit writings
1970s TV actress Susanne Zenor is 70 years old (birthdate: November 26, 1947).
it conducts. or did you want the full solid state physics theory behind that?
In theory A diode clamps 0.7 volts across it but in practice the number is not exactly 0.7 volts because it can not be controlled. This is only the case with Silicon Diodes (clamping 0.7 volts), as Germanium ones, ideally clamp 0 Volts, but in practice it is not exactly Zero. Basically, in practice it is not exactly 0.7 volts but when doing theory one assumes it to be 0.7volts for ease of operation.
Provided the zener has enough current through it it will control the voltage for a load.
In theory, yes we can. The built in potential of a diode is the function of the doping level in the n and p side. Due the fact that the hole mobility is low compared to electrons the n side of this diode will be intrinsic while the p doping is around 10^12 cm-3.