PNP and NPN. The NPN is easiest to manufacture and implement.
Not really a third type is the Darlington Pair, but students tend to blush when they talk about it. It has a higher gain and is contructed from two NPN's.
The BJT is the bipolar junction transistor, the PCT is the point contact transistor, the UJT is the uni-junction transistor, the SBT is the surface barrier transistor, the FET is the field effect transistor, the GJT is the grown-junction transistor, the AJT is the alloy-junction transistor, and the DFT is the drift field-junction transistor.
BJT is Bipolar junction transistor FET is Field effect Transistor It is a current controlled device It is voltage controlled device
A MOSFET (metal oxide semiconductor field effect transistor) can be used INSTEAD of a BJT (bypolar junction transistor, so transistor is redundant in your question), if the circuit in question is modified to allow it and the MOSFET is chosen appropriately. BJT's will usually have a higher intrinsic gain, but have lower input resistance. Also a BJT in general will work better at higher frequencies than a MOSFET (unless you choose a high frequency MOSFET) due to the capacitive nature of MOSFETs.
UJT is the voltage controlled device.in which only one mejority carriers are responsible for current flowing. UJT is one junction transistor and it is three terminal emitter and two base. BJT is the current controlled device. in which both mejority and minority carrier are responsiblefor current flowing. this type of transistor consists of two junction and three terminal these are : emitter , base , collector.
common emitter using fixed bias
The BJT is the bipolar junction transistor, the PCT is the point contact transistor, the UJT is the uni-junction transistor, the SBT is the surface barrier transistor, the FET is the field effect transistor, the GJT is the grown-junction transistor, the AJT is the alloy-junction transistor, and the DFT is the drift field-junction transistor.
Bipolar junction transistor(BJT)
BJT is Bipolar junction transistor FET is Field effect Transistor It is a current controlled device It is voltage controlled device
For a BJT transistor the three basic elements are collector, base and emitter. For a FET transistor are drain, gate and source which are analogous for the BJT parts mentioned before.
For a BJT transistor the three basic elements are collector, base and emitter. For a FET transistor are drain, gate and source which are analogous for the BJT parts mentioned before.
UJT (UniJunction Transistor): It is a transistor with only one junction and three terminals: an emitter (E) and two bases (B1 and B2). BJT (Bipolar Junction Transistor): This type of transistor consists of two junctions and three terminals, namely Emitter "E", Base "B" and Collector"C". There are two types of BJT, i) PNP and ii) NPN.
Sort of. The Bipolar Junction Transistor, or BJT, is a type of transistor. But the term transistor applies to a much wider family of components than just the Standard BJT. A rough list of the other common types of transistors includes:Field effect transistors, or FETs, including both Junction types and Metal-oxide Semiconductor types: JFETs and MOSFETs. and also UJTs or unijunction transistors.In a basic electronics course, though, if you say just 'transistors' it is assumed you mean BJTs.
Define BJTSRAM?
aplied weak input signal is amplied at output side due to very high resistence
Unless it is some leet speak term I am not aware of, BJTstands for Bipolar Junction Transistor or (less common) Business Japanese Proficiency Test.
A MOSFET (metal oxide semiconductor field effect transistor) can be used INSTEAD of a BJT (bypolar junction transistor, so transistor is redundant in your question), if the circuit in question is modified to allow it and the MOSFET is chosen appropriately. BJT's will usually have a higher intrinsic gain, but have lower input resistance. Also a BJT in general will work better at higher frequencies than a MOSFET (unless you choose a high frequency MOSFET) due to the capacitive nature of MOSFETs.
BJT & FET parameters are temperature dependent. In BJT the collector junction resistance decreasing ( collector current increasing) with temperature raise.Due to the highe temperature & current transistor will damage quickly. In FET drain resistance increasing (drain current decreasing ) with increasing temperature.Due to this property it will not damage easily. We can say from the above two statements FET is more temperature stable.FET can use in highe temperature applications.