For Si it is 0.6or 0.7 and for Ge 0.3 or 0.2.Both values correct for both si and ge
Ge
Mg. I is a non-metal and Si and Ge are metalloids.
the energy required to break covalent bond in si is 1.1ev and in ge is 0.7ev
Ge has higher conductivity than Si. Because at room temperature the electron and hole mobility for Ge is larger than those of Si. Another explanation is the lower band gap of Ge than Si.
for germanium it is 0.3 and for silicon it is 0.7
格雷格(ge lei si )or 格瑞格(ge rui si)
0.6-0.7 V for Si at room temp. and 0.3 for Ge at room temp.
Si ge 32A he yi ge xiang jiao shao nian - 1996 is rated/received certificates of: Hong Kong:IIB
Ge and Si are in the same group
Cry-al-ge-si-a.
i think so