high voltage gain :- common base since the ratio of output impedance to the input impermanence is very high in common base mode
high current gain :-common collector since it is the ratio of Ie/Ib
The differential amplifier circuit configuration provides both voltage and current gain.
Ie=Ic+Ib
BJT is Bipolar junction transistor FET is Field effect Transistor It is a current controlled device It is voltage controlled device
FET is abbreviation of Field Effect Transistor. This is a transistor in which current is controlled by voltage only and no current is drawn. It is a high input impedence device and is used in computers, telecommunication and control circuits. This transistor is better in certain parameters as compared to BJT, that is Bipolar Junction Transistor.
The emitter
UJT is the voltage controlled device.in which only one mejority carriers are responsible for current flowing. UJT is one junction transistor and it is three terminal emitter and two base. BJT is the current controlled device. in which both mejority and minority carrier are responsiblefor current flowing. this type of transistor consists of two junction and three terminal these are : emitter , base , collector.
In the case of Bipolar Junction Transistor current conduction is due to both holes and electrons. That's why noise is high in Bipolar Junction Transistor
Bipolar junction transistor(BJT)
Ie=Ic+Ib
BJT is Bipolar junction transistor FET is Field effect Transistor It is a current controlled device It is voltage controlled device
alpha is the common base current gain = Ic/Ie.beta is the common emitter current gain = Ic/Ib.
The terminals on a MOSFET are called the "Source", "Drain", and "Gate". Just as with a bipolar junction transistor (BJT) the direction of current flow will be based on the doping configuration of the semiconductor. In a MOSFET, the doping configuration can be either n-channel or p-channel, but with MOSFETS, they also come in a "normally on" or "normally off" configuration, which is specified by being either "depletion mode" or "enhancement mode", respectively.
The Kirk effect occurs at high current densities in bipolar junction transistors and causes a dramatic increase in the transit time of a transistor.
FET is abbreviation of Field Effect Transistor. This is a transistor in which current is controlled by voltage only and no current is drawn. It is a high input impedence device and is used in computers, telecommunication and control circuits. This transistor is better in certain parameters as compared to BJT, that is Bipolar Junction Transistor.
Assuming you mean a bipolar junction transistor (BJT): 1. Reverse bias on the collector-base junction. 2. Forward bias on the base-emitter junction, that is 3. Sufficient to give the correct operating point of collector voltage/collector current.
amplifiers operated with Common emmitter configuration for bipolar transistors , will give both voltage & current gain . Though equivalent fet & mosfet circuit topologies exist , these amplifiers operate more on signal voltage on input & the signal current is negligible compared to a bipolar transistor.
Drain is the answer
The emitter