0
What else can I help you with?
What are the advantages and disadvantages of JFET over BJT?
An advantage of JFET is stable high current operation. A disadvantage of JFET is low capacitance. An advantage of BJT is constant voltage operation. A disadvantage of BJT is low thermal conductance.
Why is input resistance low and output resistance high in transistor?
The input resistance of a trasister is jst like pn junction of a diode which has a breakdown voltage of .7v for silicon and the output resistance is like a reverse bias of a diode and hence the resistance is high
What is the difference between a transistor and scr?
SCR or Silicon Controlled Rectifiers are Bipolar junctions Transistor ( Thyristor Family), SCRs are made of two transistors thats why they PNPN or NPNP devices. The three important parts of transistor are - Emitter, Collector & Base. & the Three Important parts of SCR are - Anode, Cathode & Gate. Use of SCRs- rectification of high power AC & power control applications, such as lamp dimming, regulators and motor control. Use of Transistors - switch, audio, high voltage, amplifiers, switcher
What is Transistor Switching time?
Transistor switching times: The turn-on time of switching transistor sum of delay time (td) and rise time (tr). ton = td + tr. Delay time (td): It is defined as the time during which the collector current rises from zero to 0.1ICS.
The value of r when a transistor is biased to cut off is -?
Collector-to-Emitter resistance is high when the transistor is biased off.
Do people use bipolar junction transistor today?
Yes people still use bipolar junction transistors today because of its high switching speed.
What is a schottky transister?
A very high speed bipolar junction transistor having a metal-semiconductor emitter base junction instead of a semiconductor-semiconductor emitter base junction.
What is kirk effect?
The Kirk effect occurs at high current densities in bipolar junction transistors and causes a dramatic increase in the transit time of a transistor.
What is FET?
FET is abbreviation of Field Effect Transistor. This is a transistor in which current is controlled by voltage only and no current is drawn. It is a high input impedence device and is used in computers, telecommunication and control circuits. This transistor is better in certain parameters as compared to BJT, that is Bipolar Junction Transistor.
What are the applications of jfet transistor?
The Junction Field Effect Transistor (JFET)exhibits characteristics which often make it more suited to a particular application than the bipolar transistor. Some of these applications are: - High Input Impedance Amplifier - Low-Noise Amplifier - Differential Amplifier - Constant Current Source - Analogue Switch or Gate - Voltage Controlled Resistor
How works heterojunction bipolar transistor?
The heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) which uses differing semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it can handle signals of very high frequencies, up to several hundred GHz. It is commonly used in modern ultrafast circuits, mostly radio-frequency (RF) systems, and in applications requiring a high power efficiency, such as RF power amplifiers in cellular phones. The idea of employing a heterojunction is as old as the conventional BJT, dating back to a patent from 1951.
What is the advantage of saturation mode of transistor?
The advantage of saturation mode in a transistor, particularly in bipolar junction transistors (BJTs), is that it allows the transistor to act as a closed switch, enabling maximum current flow from collector to emitter with minimal voltage drop. This results in high efficiency and power delivery in switching applications, such as in digital circuits and power amplification. Additionally, in saturation mode, the transistor can quickly turn on and off, making it ideal for high-speed switching operations.
Which configuration of bipolar junction transistor which will give both current gain and voltage gain?
high voltage gain :- common base since the ratio of output impedance to the input impermanence is very high in common base mode high current gain :-common collector since it is the ratio of Ie/Ib
How is mosfet different from bjt?
BJT(Bipolar junction Transistor)-It is bipolar device -meaning both electron and holes are responsible for conduction.-It is mainly used for amplification and switching purposes.-It is current controlled device.MOSFET(Metal Oxide Semiconductor Field Effect Transistor)-It is unipolar device -meaning only one of the charge carriers is responsible for conduction.-It has very high input resistance.Due to this reason it is used in initial stage of Operational amplifier.-It is voltage controlled device.
What is the difference between jfet and mosfet?
1-BJT is bipolar while JFET is unipolar. 2-BJT has low input impedence while JFET has high input impedence. 3-JFET has low power discipation as compared to BJT. 4-JFET has low noise as compared to BJT. 5-BJT is current controlled while JFET is voltage controlled. 6-JFET is mostly used in digital circuits.
What is the difference between transistor and FET?
An ordinary junction transistor consists of two junctions. In effect a variation of the base to emitter current influences the reverse leakage current at the base to collector junction. The base being common to both junctions. A Field Effect Transistor uses an electric field to narrow the conductive channel thus varying its resistance. A FET has an extremely high input resistance compared with that of a standard junction transistor.
How does a Darlington amplifier work?
A Darlington amplifier consists of two bipolar junction transistors (BJTs) connected in a configuration that allows the current amplified by the first transistor to drive the second transistor. This arrangement results in a very high current gain, as the output current of the first transistor becomes the input current for the second. The input signal is applied to the base of the first transistor, which greatly amplifies it before passing it to the base of the second transistor for further amplification. The overall effect is a significant increase in both current and voltage gain, making it useful in various applications where high gain is required.
