The heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) which uses differing semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it can handle signals of very high frequencies, up to several hundred GHz. It is commonly used in modern ultrafast circuits, mostly radio-frequency (RF) systems, and in applications requiring a high power efficiency, such as RF power amplifiers in cellular phones. The idea of employing a heterojunction is as old as the conventional BJT, dating back to a patent from 1951.
The emitter
because once saturated it will conduct current both way raja TOQEER (Pakistan)
Ie=Ic+Ib
BJT is Bipolar junction transistor FET is Field effect Transistor It is a current controlled device It is voltage controlled device
the base circuit
Stephen M. Young has written: 'A superlattice emitter structure for a heterojunction bipolar transistor'
Peter Ashburn has written: 'Sige Heterojunction Bipolar Transistors'
In the case of Bipolar Junction Transistor current conduction is due to both holes and electrons. That's why noise is high in Bipolar Junction Transistor
Transistor is known as bipolar junction becoz it has 2 pole. Input is given to the 2 junction and output is taken from to junction
Mark Gerard Schumacher has written: 'VLSI compatible SiGe heterojunction bipolar transistors'
Yes, the are different names for the same thing.
A bipolar transistor uses both majority and minority charge carriers for conduction, while a field effect transistor primarily relies on majority charge carriers. Field effect transistors have a higher input impedance compared to bipolar transistors. Additionally, bipolar transistors are current-operated devices, while field effect transistors are voltage-operated devices.
The emitter
Drain is the answer
because once saturated it will conduct current both way raja TOQEER (Pakistan)
through the used of multi-tester
amplifier, switch, oscillator, etc.