A: They both have redeemable quality. Germanium has lower turn on voltage as compared to silicon however their current capability is not too great and also have a problem leaking with temperature. SO THE USE IS DEPENDENT ON APPLICATIONS
Silicon = 0.7v : Germanium = 0.3v
The forward biased voltage drop of a diode depends on the type of diode and the current through the diode. A typical silicon diode will exhibit a voltage drop between 0.6v and 1.4v depending on current. An LED might range from 2v to 3v. A germanium diode might go a low as 0.2v. Bottom line; it varies.
The amount of (forward biased) voltage across a diode is dependent on current and temperature. A typical silicon diode has a forward voltage of about 0.6V at low current and temperature. As current goes up, voltage goes up slightly, with a typical voltage being 1.4V at high current. As temperature goes up, voltage goes down slightly, but the maximum current rating also goes down.
The type of diode used to convert alternating current in to direct current is the power diode.
it would be a n-type semiconductor because phosphorus has more valence electrons than silicon does.
Silicon = 0.7v : Germanium = 0.3v
you can find silicon and germanium materials has 4 valence electrons. This makes them to be useful to make p type and n type materials easily.They are very cheap compare to others.
Silicon is more semiconductor than Germanium because the characteristics of silicon can be easily modified to obtain either a p-type or n-type material.
becoz Si and Ge are indirect bandgap semiconductors. for lasing action direct bandgap semiconductors are required of the type In Ga As P
germanium or silicon crystal
The forward biased voltage drop of a diode depends on the type of diode and the current through the diode. A typical silicon diode will exhibit a voltage drop between 0.6v and 1.4v depending on current. An LED might range from 2v to 3v. A germanium diode might go a low as 0.2v. Bottom line; it varies.
The cut in voltage is that voltage where after the current increase rapidly and it's value is different-2 for different type of semiconductor. for silicon it is 0.7 and for germanium it is 0.3 volt. It means if you made a diode from silicon than applied voltage below 0.7 volt will not able to flow current (if flow than it is in term of few micro ampere) . it means diode will stay in off mode and for germanium same things will happen and it will rest on off condition below 0.3 volt(applied).
A light emitting diode is a special type of diode made of transparent semiconductor (silicon & germanium are opaque) like aluminum indium gallium phosphide. The selected semiconductor must also have a large enough band gap that when electrons fall into holes photons are emitted.
Examples: germanium, selenium, tellurium, antimony, boron, silicon.
germanium
Germanium atoms are hold together through covalent bonds, although they have more metallic character than carbon and silicon.
It's a rectifier diode made simply by combining P type and N type silicon. Where the two are joined, forms a junction that allows conduction in one direction only. A pn junction diode is a diode obtained by by dopping a silicon crystal through the process of covalent bond.