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when the p-n junction is heavily doped p-n junction diode has very sharp breakdown voltage.
If the gate-channel junction of a JFET was not reverse biased the JFET would just act as a forward biased diode across that junction and the gate would cease to have any control over the channel conductance. For the same reason in a MOSFET the substrate-source/channel/drain junction must remain reverse biased. The MOSFET could not act as a MOSFET.
When a diode passes from forward biased to reverse biased it takes a short period of time for the charge carriers in the vicinity of the junction to recombine and create a nonconducting depletion region. During this time period the diode conducts in the reverse direction, this is called the reverse recovery time. Its different for every kind of diode, to get the value for a specific diode consult the datasheet.
A nonconducting diode is biased in the reversed direction (reverse polarization).
When p-n junction of a diode reversed biased then majority carriers are not able to cross the junction and are attracted in respective regions.So current becomes approximately zero.But because of minority carriers a reverse current keeps flowing.It is called Reverse Saturation Current.And due to attraction towards sides,charges go away from junction.So width of depletion reason increases.
reverse biased
cutoff
Transistor will be in OFF mode.
when the p-n junction is heavily doped p-n junction diode has very sharp breakdown voltage.
If the gate-channel junction of a JFET was not reverse biased the JFET would just act as a forward biased diode across that junction and the gate would cease to have any control over the channel conductance. For the same reason in a MOSFET the substrate-source/channel/drain junction must remain reverse biased. The MOSFET could not act as a MOSFET.
When a diode passes from forward biased to reverse biased it takes a short period of time for the charge carriers in the vicinity of the junction to recombine and create a nonconducting depletion region. During this time period the diode conducts in the reverse direction, this is called the reverse recovery time. Its different for every kind of diode, to get the value for a specific diode consult the datasheet.
A nonconducting diode is biased in the reversed direction (reverse polarization).
In a JFET the only insulation between the gate and the channel is a reverse biased diode junction, if this junction becomes forward biased then the gate and channel are effectively shorted and the device no longer acts as a transistor (it will act as a forward biased diode instead). In the n-channel JFET, the gate is the P-side of this diode and the channel is the N-side of this diode. To keep this diode reverse biased (and the device operating as a transistor) therefor the gate MUST always be maintained at a voltage more negative than the most negative section of the channel.
When p-n junction of a diode reversed biased then majority carriers are not able to cross the junction and are attracted in respective regions.So current becomes approximately zero.But because of minority carriers a reverse current keeps flowing.It is called Reverse Saturation Current.And due to attraction towards sides,charges go away from junction.So width of depletion reason increases.
In reverse bias,the currents flowing through the junctioare very smalland interal heating of junction does not takes place
because semiconductor diodes are not perfect insulators when reverse biased. if you want a diode that is a perfect insulator when reverse biased, use a vacuum tube diode.
what is the difference between reverse characteristics of zener diode and a practical diode ?