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Which came first the diffused junction transistor the point contact transistor the surface barrier transistor or the alloy junction transistor?
Wiki User
∙ 11y ago
The Nobel Prize was awarded to Bardeen, Brattain and Shockley - although Shockley had not been a major part of the point-contact work.
The junction transistor *principle* was patented by Julius Lilienfeld in 1928.
Shockley patented the junction transistor in 1948, soon after Bardeen and Brattain.
Wiki User
∙ 11y ago
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What types of transistors are the following - BJT PCT UJT SBT FET GJT AJT DFT?
The BJT is the bipolar junction transistor, the PCT is the point contact transistor, the UJT is the uni-junction transistor, the SBT is the surface barrier transistor, the FET is the field effect transistor, the GJT is the grown-junction transistor, the AJT is the alloy-junction transistor, and the DFT is the drift field-junction transistor.
What transistor is practically obsolete and has been replaced by the junction transistor?
triode ....is not the answer point contact is the answer
Where did the first transistor computer come from?
bell labs built one out of early point contact transistors in 1948 before the invention of the junction transistor.
What transistor is used most in computer circuits?
at this time it is metal oxide field effect transistor. 20 years ago it was mostly bipolar junction transistor, 45 years ago it was point contact or surface barrier transistor. before that it was vacuum tubes and germanium point contact diodes. in the future it may be nanotube field effect transistors, or even DNA logic. both would probably be operating in a thin film of some liquid which would have to be encapsulated.
How does a germanium diode look like?
Germanium diodes can be point contact, grown junction, alloy junction, diffused junction, or surface barrier; each type is made differently.point contact, a sharp pointed metal wire is pressed against the surface of a piece of germaniumgrown junction, as a boul of germanium is being pulled a quantity of the opposite dopant is added to the molten germanium, the boul is then sliced on opposite sides of the junction and diced into individual diodesalloy junction, a pellet of alloy containing the opposite dopant is placed on a piece of germanium and heated until it alloys into the surface of the germaniumdiffused junction, dopant of the opposite type of a piece of germanium is applied and heated to allow it to diffuse into the germaniumsurface barrier, a piece of germanium is carefully cleaned then metal is electroplated on a small spot on its surfaceNote: these are significantly over simplified descriptions (other than the grown junction method only one device can be made at one time). Note: all of these methods have also been used to make germanium transistors.
How do you you make a diod?
Germanium diodes can be point contact, grown junction, alloy junction, diffused junction, or surface barrier; each type is made differently.point contact, a sharp pointed metal wire is pressed against the surface of a piece of germaniumgrown junction, as a boul of germanium is being pulled a quantity of the opposite dopant is added to the molten germanium, the boul is then sliced on opposite sides of the junction and diced into individual diodesalloy junction, a pellet of alloy containing the opposite dopant is placed on a piece of germanium and heated until it alloys into the surface of the germaniumdiffused junction, dopant of the opposite type of a piece of germanium is applied and heated to allow it to diffuse into the germaniumsurface barrier, a piece of germanium is carefully cleaned then metal is electroplated on a small spot on its surfaceNote: these are significantly over simplified descriptions (other than the grown junction method only one device can be made at one time). Note: all of these methods have also been used to make germanium transistors.
Which junction has least junction capacitance?
point contact has the least junction capacitance
When was the first transistor created?
1947 at Bell Labs. It was a germanium point contact transistor.
When was the point contact transistor created?
1947
What is meant by 0.3 volts for germanium and 0.7 volts for silicon?
== When we make a semiconductor junction (a p-n junction), the electric fields force charges to shift creating what is called a depletion region. This depletion region forms a potential barrier across the junction. This potential barrier has a voltage associated with it, and that voltage is 0.3 volts (approximately) for germanium semiconductor material, and 0.7 volts (approximately) for silicon semiconductor. The terms we apply to this barrier potential are the built-in voltage (or potential), junction voltage (or potential), and contact potential. Use the link below to check facts and review some other closely related material.
What is a junction or point of close contact between neuron?
The synaptic cleft is the junction or point of close contact between neurons.
Type of junction where a motor neuron and a skeleton muscle cell have contact?
A neuromuscular junction.
