Power FET
BJT is Bipolar junction transistor FET is Field effect Transistor It is a current controlled device It is voltage controlled device
FET is abbreviation of Field Effect Transistor. This is a transistor in which current is controlled by voltage only and no current is drawn. It is a high input impedence device and is used in computers, telecommunication and control circuits. This transistor is better in certain parameters as compared to BJT, that is Bipolar Junction Transistor.
CMOS stands for 'Complementary Metal Oxide Silicon' and is the construction method of the device. FET stands for 'Field Effect Transistor'. Although it is a transistor and is used in a similar fashion, it is totally different in the way it is controlled and biased. The pin outs are named differently. A bipolar transistor has a Base Emitter and Collector. A FET has a Drain Source and Grid. Current is controlled between the 'Source' and 'Drain' by altering the voltage on the grid. It works in a similar way to the old vacuum tube valves and is why the control is called a grid. It forms a 'pinch off' effect, in the path between the source and drain, instead of the depletion layer in a normal transistor.
bjt is bipolar device whr fet is unipolar....fet is input resistance thts y fet gain is less compared to bjt..... The applications that will prefer bipolar junction transistors to field effect transistors are applications that require fast switching.
A FET is called a square-law device because of the relationship of ID to the square of a term containing VGS.
Power FET
fet is a voltage controlled device...cut off voltage in fet refers to that voltage of the gate - source junction at which the current flow through channel is zero
fet is a voltage controlled device...cut off voltage in fet refers to that voltage of the gate - source junction at which the current flow through channel is zero
Gate
BJT is Bipolar junction transistor FET is Field effect Transistor It is a current controlled device It is voltage controlled device
FET's (field effect transistors) are unipolar devices because unlike BJT's that use both electron and hole current, they operate only with one type of charge carrier. BJT is a current-controlled device; that is the base current controls the amount of collector current. FET is a voltage-controlled device, where voltave between two of the terminals (gate and source) controls the current through the device. BJT's have a low input impedance ( ~1k -3k ohms), while FET's have a very high input impedance (~10^11 ohms). Consequently FET's have a lower power consumption. BJT's produce more noise than FET's . FET's have a slower switching speed . BJT's are subject to thermal runway while FET's are immune to this problem. BJT's have a higher cutoff frequencey and a higher maximum current then FET's. FET's are easy to fabricate in large scale and have higher element density the BJT's.
explain all the parameters of fet
FET is abbreviation of Field Effect Transistor. This is a transistor in which current is controlled by voltage only and no current is drawn. It is a high input impedence device and is used in computers, telecommunication and control circuits. This transistor is better in certain parameters as compared to BJT, that is Bipolar Junction Transistor.
which device is similar to a mouse
CMOS stands for 'Complementary Metal Oxide Silicon' and is the construction method of the device. FET stands for 'Field Effect Transistor'. Although it is a transistor and is used in a similar fashion, it is totally different in the way it is controlled and biased. The pin outs are named differently. A bipolar transistor has a Base Emitter and Collector. A FET has a Drain Source and Grid. Current is controlled between the 'Source' and 'Drain' by altering the voltage on the grid. It works in a similar way to the old vacuum tube valves and is why the control is called a grid. It forms a 'pinch off' effect, in the path between the source and drain, instead of the depletion layer in a normal transistor.
bjt is bipolar device whr fet is unipolar....fet is input resistance thts y fet gain is less compared to bjt..... The applications that will prefer bipolar junction transistors to field effect transistors are applications that require fast switching.