It depends on the exact part numbers, but power devices are typically slower. There are, of course, RF power transistors, so you have to compare apples with apples.
generally bjt is faster than fets...because of many intrinsic junction capacitances between ...source and drain and bulk and gate,,,.. but now a days due to advancement in scaling fet is reduced in size sooo much that it became faster than bjt... mosfet is faster because of scaling. small channel length. even though it is slower but distance to be travelled is less
if the input signal passes through the biasing resistors, the biasing conditions get altered . To prevent this, the input signal should be directly sent to the amplifier (BJT) .Since a capacitor acts as a short circuit for ac signals,capacitors are placed both in the input side and the output side.
The signal gain of a CE BJT amplifier is hFe or collector resistance divided by emitter resistance, whichever is less.
Yes
either field effect (JFET, MOSFET) or junction (BJT) or point contact (usually considered obsolete)either small signal or high powereither electron majority carrier (N-channel FET, NPN BJT) or hole majority carrier (P-channel FET, PNP BJT)either linear (used in amplifier and oscillator circuits) or switching (used in digital logic circuits)etc.
neither is better, it depends on purpose
either field effect (JFET, MOSFET) or junction (BJT) or point contact (usually considered obsolete)either small signal or high powereither electron majority carrier (N-channel FET, NPN BJT) or hole majority carrier (P-channel FET, PNP BJT)either linear (used in amplifier and oscillator circuits) or switching (used in digital logic circuits)etc.
aplied weak input signal is amplied at output side due to very high resistence
If you have questions about Bipolar Junction Transistors (BJT), there are a small handful of websites. Indiabix, All About Circuits, and Research Gate are some places you can find information.
it is the collector voltage multiplied by the sum of all the currents.
bjt is bipolar device cmos is from mos family and its unipolarbjt is current control devicecmos is voltage control devicebjt is used for high current applicationcmos is used for high voltagebjt has not high input impedancecmos has high input impedacebjt has some what more static power consumptioncmos has zero static power consumption prominient advantage
Disadvantage:Easy to damage when compared to BJT