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MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor, It is broadly Classified into Depletion type MOSFETS and Enhancement type MOSFETS. Depletion type MOSFETS are further classified into P-Channel and N-Channel Depletion type MOSFET, Similarly Enhancement type MOSFETS are further classified into P-Channel and N-Channel Enhancement type MOSFET.
DC or Direct Current. The current is no alternating.
With the E-MOSFET, VGS has to be, 'greater than VGS(th) to get any drain current at all. Therefore, when E-MOSFETs are biased, self-bias, current-source bias, and zero bias cannot be used because these forms of bias depend on the depletion mode of operation. This leaves gate bias, voltage-divider bias, and source bias as the means for biasing E-MOSFETs.
A voltmeter has greater accuracy when measuring direct current. This kind of current is constant unlike alternating current which has constant fluctuations.
No. A constant DC current of sufficient magnitude induces smoke in a transformer.
MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor, It is broadly Classified into Depletion type MOSFETS and Enhancement type MOSFETS. Depletion type MOSFETS are further classified into P-Channel and N-Channel Depletion type MOSFET, Similarly Enhancement type MOSFETS are further classified into P-Channel and N-Channel Enhancement type MOSFET.
Saturation region is one in which the output current is independent of the input and remains almost constant. Hence, MOSFETs in saturation are modeled as current sources( whose current is independent of voltage across it)
A depletion MOSFET is a MOSFET that is normally on. It outputs maximum current when the gate-source voltage is 0V. As the gate-source voltage increases, the drain-source channel becomes more resistive and the current decreases. An enhancement MOSFET has the opposite behavior. It is normally off. It outputs no current when the gate-source voltage is 0V. As the gate-source voltage increases, the drain-source channel becomes less resistive and the current increases.
CMOS is better than single MOSFETs because the complementary MOSFETs in CMOS always have one off and the other on, reducing the idle current to only leakage current and the output voltage exactly equal that of either the power or ground as there is no voltage drop across the MOSFET that is on. With just one MOSFET the device draws current anytime it is in the on state, even if idle.
Because of threshold voltage reduction of MOSFETs. Comparing with metals for the gate of MOSFETs, polysilicon has small work function difference with the substrate silicon of MOSFETs.
The output impedance is z= V/I, the ratio of the constant voltage and the constant current source.
The terminals on a MOSFET are called the "Source", "Drain", and "Gate". Just as with a bipolar junction transistor (BJT) the direction of current flow will be based on the doping configuration of the semiconductor. In a MOSFET, the doping configuration can be either n-channel or p-channel, but with MOSFETS, they also come in a "normally on" or "normally off" configuration, which is specified by being either "depletion mode" or "enhancement mode", respectively.
What is considered "constant current"
DC or Direct Current. The current is no alternating.
MOSFETs
In DC or direct current, the flux is constant. AC or alternating current is variable.
With the E-MOSFET, VGS has to be, 'greater than VGS(th) to get any drain current at all. Therefore, when E-MOSFETs are biased, self-bias, current-source bias, and zero bias cannot be used because these forms of bias depend on the depletion mode of operation. This leaves gate bias, voltage-divider bias, and source bias as the means for biasing E-MOSFETs.