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The DDR3 has two pairs of DQS in per data lane for optimal termination values. IT is also for signal topology and the possible swapping of the DDR3's memory side pin.Ê
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What is DQS in DDR3 SDRAM?
DQS = data strobe. When data is read from DRAM using the DQ pins, DQS is asserted so that memory controller can use that to read data. When memory controller writes to DRAM, it asserts DQS when DQ pins have the data to be written.
When was DQS created?
DQS was created in 1985.
Is dqs browny batter blizzard good?
Most people tend to think so, yes.
Why some parts of tiling works did not meet expectations?
because u are not allow to copy the idea from the ppl , are u study DQS 1 from tarc setapak , me too
What are the rules for a W.W.E. royal rumble match?
its simple. theyre are no dqs, the only way of elimination is over the top rope feet touching the floor. 30 men enter at a set time interval between the entrants the last man in the ring wins.
Who owns the WWE hard core title and if no one does where did it go?
The World Wrestling Entertainment (WWE) Hardcore Championship was a hardcore wrestling championship defended in WWE (formerly the World Wrestling Federation) and was contested under "hardcore" rules, meaning there were no DQs, no countouts , and pin falls could be counted anywhere. In the latter part of the title's history another rule was implemented which allowed for anyone to challenge the champion at any time, 24 hours a day, seven days a week, provided there was a referee present (dubbed the "24/7" rule). It was established on November 2, 1998 7 it was retired on August 26, 2002.
What is the function of a memory cell?
Computer systems typically employ a central processing unit (CPU), a display device, input devices, and memory for data storage. Memory devices are typically provided as internal storage areas in the computer. Memory for data storage generally comes in the form of integrated circuit chips. Memory for a computer system is technically any form of electronic, magnetic or optical storage. It is generally divided up into different categories based in part upon speed and functionality. In general, memory types can be categorized according to the storage state into volatile memory and non-volatile memory according to storage type. The primary difference between volatile memory and non-volatile memory is that a volatile memory needs to be supplied with external power in order to hold and refresh data while a non-volatile memory can maintain data for extended periods of time without any power being supplied to the device. Data intended for high-speed short-term access is typically stored in volatile memory. Data intended for long term future access is typically stored in non-volatile memory. Volatile memory currently has faster access times and higher data transfer rates than non-volatile memory. This makes it an appealing alternative for systems requiring very high-speed access to data typically stored in long term, non-volatile storage devices. Most computer systems utilize both volatile and non-volatile memory in the same system or device. In a typical computer system, data intended for high-speed short-term access, such as on-chip memory for the CPU, and often first and second level off-chip memory, are typically stored in volatile memory devices such as a cache or random access memory (RAM, DRAM, SRAM) which typically have nanosecond to microsecond access times. Data intended for long-term storage or mass storage are typically stored in non-volatile storage devices such as magnetic disks, hard disk drives, zip drives, floppy disk drives, tape drives and optical storage media which typically have access times on the order of milliseconds or seconds. Random access memory (RAM) is the main memory of a computer system used for storing programs and data. RAM provides temporary read/write storage while hard disks offer semi-permanent storage. All programs must be run through RAM before they can be used. The term random derives from the fact that the CPU can retrieve data from any individual location, or address, within RAM. Most RAM is volatile, which means that it requires a steady flow of electricity to maintain its contents. As soon as the power is turned off, whatever data was in RAM is lost. The volatile memory typically comprises random access memory (RAM) and is considered the main memory for the computer system. To facilitate quick access for processing, a typical modern computer has a main memory connected by a memory bus directly to the processor. Random access memory is much faster to read from and write to than the other kinds of storage devices in a computer such as the hard disk, floppy disk, and CD-ROM. In contrast to the relatively slow storage memory, the main memory is generally comprised of fast, expensive volatile random access memory (RAM) with access times generally less than 100 nanoseconds. Volatile random access memory (RAM) devices may be further divided into two categories, including static random access memory (SRAM) and dynamic random access memory (DRAM). Static random access memory (SRAM) consists of flip-flop latches, which each retain one bit of data for as long as power is maintained. In dynamic random access memory (DRAM), each memory cell is made up from one transistor and a capacitor. Random access memory is usually used to designate a data memory having a multiplicity of memory cells, each of which can store a datum and which can be accessed selectively and directly to selectively write in or read out data. Random access memories, such as static random access memories or dynamic random access memories, generally comprise a multiplicity of addresses for writing therein data. Data in the addresses may be accessed, for example, through data latches for performing operations, e.g., programming, on a memory cell array, e.g., a non-volatile memory cell array. As a computer system may be used in a variety of ways the amount of RAM deemed appropriate in one instance may be insufficient or superfluous in another. For example, an image processing and manipulation application may not only be time consuming to initialize for use, but also may require the majority of available main memory RAM resources, while a simple text editor may hardly be noticeable to the system. Static random access memory (SRAM) devices have been employed for decades to store electronic data. An SRAM device includes an array of memory cells organized into rows and columns of memory cells. An SRAM cell includes a pair of inverters with the outputs of the inverters cross-coupled to form a flip-flop. The typical SRAM cell includes four transistors for storing data and two transistors for selection of a particular cell. An addressable word line is coupled to the memory cells in a distinct row of memory cells. The memory cells of an SRAM typically have first and second inverters whose inputs and outputs are connected to each other, and first and second transfer transistors that connect the output ends of the first and second inverters to a bit line pair. The first and second inverters include a load transistor and a driver transistor. The memory cells in a column of memory cells are coupled to an addressable pair of bit lines. Data is written to and read from a memory cell in the memory cell array by selecting a row of memory cells and accessing memory cells therein that are coupled to selected bit line pairs. Static random access memory cells typically provide memory storage for bits that can be rapidly read from and written to. Unlike dynamic random access memory (DRAM) cells, because of the flip-flop feedback effect, SRAM cells typically enable storage of static data even without refresh operations. The static random access memory is the main stream of the on-chip memories to be mounted on an LSI together with other parts. In spite of this, the SRAM, since it is composed of six transistors, requires a large space for disposing memory cells, encountering a problem of mounting space when it employed to be mounted on an LSI together with other parts. Due to its larger memory cell size, an SRAM is typically more expensive to manufacture than a DRAM. An SRAM typically has a smaller read access time and lower power consumption than a DRAM. Therefore, where fast access to data or low power is needed, SRAMs are often used to store the data. A dynamic random access memory (DRAM) device is a typical volatile memory device constructed from an array of memory cells. Each memory cell comprises an active device and a capacitor. Furthermore, each memory cell is electrically connected to a word line (WL) and a bit line (BL). A dynamic random access memory includes a large number of memory cells, each of which can store at least one bit of data. In typical DRAM, the coupling of memory cells results in a differential voltage appearing on a bit line (or bit line pair). The differential voltage is amplified by a sense amplifier, resulting in amplified data signals on the bit lines. The applied memory address also activates column decoder circuits, which connect a given group of bit lines to input/output circuits. The memory cells are arranged in an array having a number of rows and columns. Memory cells within the same row are commonly coupled to a word line and memory cells within the same column are commonly coupled to a bit line. The memory cells within the array are accessed according to various memory device operations. Such operations include read operations, write operations and refresh operations. DRAM memory cell stores data by placing charge on, or removing charge from, a storage capacitor. According to the type of capacitor used in each memory cell, dynamic random access memory can be further sub-divided into a stack capacitor DRAM and a deep trench capacitor DRAM. Computer systems and other electronic devices containing a microprocessor or similar device typically include system memory, which is generally implemented using dynamic random access memory. The primary advantage of DRAM is that it uses relatively few components to store each bit of data, and is thus relatively inexpensive to provide relatively high capacity system memory. A disadvantage of DRAM is that their memory cells must be periodically refreshed. Pseudo static random access memory (PSRAM) is another type of DRAM. PSRAM is a low power DRAM having a static random access memory interface for wireless applications. DRAM uses a main clock signal and a data strobe signal (DQS) for addressing the array of memory cells and for executing commands within the memory. The clock signal is used as a reference for the timing of commands such as read and writes operations, including address and control signals. The DQS signal is used as a reference to latch input data into the memory and output data into an external device. Dynamic random access memory uses an interface with address lines that are typically multiplexed in time. DRAM memory devices generally employ a row decoder circuit comprising a decoding unit and a wordline driver to drive a voltage level of a wordline high or low in order to "open" or "close" access to an associated row of memory cells. Such circuits operate to drive the wordline voltage level between a range of a positive voltage, which is greater than a maximum available power supply voltage and a negative voltage, which is less than a reference voltage, such as a ground reference. A synchronous DRAM (SDRAM) is a type of DRAM that can run at much higher clock speeds than conventional DRAM memory. A synchronous DRAM can perform various functions in synchronism with a clock signal that is supplied from an external source. The synchronous DRAM can refresh itself independently of the computer system which incorporates the synchronous DRAM, by generating refresh addresses inside of the memory using internal addresses. While the synchronous DRAM is being refreshed, word lines are selected to satisfy a refresh period required by the refresh characteristics of cells and a refresh rate required by the computer system. When the synchronous DRAM is in normal operation, a common output word line is provided for a plurality of banks in an interleaved configuration, and only one of the banks is selected at a time. The SDRAM has internal logic used to advance the data address. In addition to the timing signals, certain control registers of the internal logic of the SDRAM must be loaded with timing control parameters before the sequential access mode may be used. Recent advances in memory technology have included the development of magnetic RAM (MRAM). The MRAM is a memory device for reading and writing information wherein multi-layer ferromagnetic thin films is used by sensing current variations according to a magnetization direction of the respective thin films. MRAM uses a ferromagnetic material as one of the next generation memory devices. The MRAM embodies a memory device by using a giant magneto resistive (GMR) or spin-polarized magneto-transmission (SPMT) phenomenon generated when the spin influences electron transmission. MRAM stores information magnetically, so it does not require a constant power supply. This quality is known as non-volatility. A magnetic random access memory (MRAM) element typically has a structure that includes first and second magnetic layers which are separated by a non-magnetic layer. A magnetic vector in one of the two magnetic layers is magnetically fixed or pinned, while the magnetic vector of the other of the two magnetic layers is not fixed and thus its magnetization direction is free to be controlled and switched. Information is written to and read from the element as a logic "1" or a logic "0" by changing the direction of the non-fixed magnetization vector in the other of the two magnetic layers. The differences in magnetization vector direction cause resistance variations within the element which can be measured. MRAM can offer all the advantages in speed and size that volatile memory offers and brings the added advantage of being non-volatile and, in some architectural configurations, cheaper to manufacture. MRAM can operate at speeds similar to either SRAM or DRAM, thus allowing it to be utilized within main memory. The MRAM has a high speed and low power consumption, and allows high integration density due to its unique properties of the magnetic thin film, and also performs a nonvolatile memory operation such as a flash memory. A cache memory and a main memory are used for a large scale integration circuit having a central processing unit. Memory caching is a widespread technique used to improve data access speed in computers and other digital systems. The speed at which processors can execute instructions has typically outpaced the speed at which memory systems can supply the instructions and data to the processors. Due to this discrepancy in the operating speeds of the processors and system memory, the system memory architecture plays a major role in determining the actual performance of the system. Most current memory hierarchies utilize cache memory in an attempt to minimize memory access latencies. A cache is a small, fast memory that acts as a buffer between a device that uses a large amount of memory and a large, slower main memory. The cache's purpose is to reduce average memory-access time. Caches are effective because of two properties of software programs: spatial and temporal locality. Cache memory is used to provide faster access to frequently used instructions and data, which helps improve the overall performance of the system. Caching relies on a property of memory access known as temporal locality. Temporal locality states that information recently accessed from memory is likely to be accessed again soon. Information in cache RAM may be stored based upon two principles, namely spatial locality and temporal locality. The principle of spatial locality is based upon the fact that when data is accessed at an address, there is an above average likelihood that the data which is next required will have an address close to that of the data which has just been accessed. By contrast, temporal locality is based upon the fact that there is an above average probability that data which has just been accessed will be accessed again shortly. Cache memory is typically implemented using static random access memory (SRAM) because such memory need not be refreshed and is thus always accessible for a write or a read memory access. Computers almost always contain a small amount of read-only memory (ROM) that holds instructions for starting up the computer. Read only memory (ROM) is a non-volatile memory commonly used in electronic equipment such as microprocessor-based digital electronic equipment and portable electronic devices. Read only memory is a type of non-volatile data storage device that can retain stored data even when the power is cut off. Among the memory products, non-volatile memory is one type of memory device having the capacity for writing data into, reading data from and erasing stored data multiples of times. Moreover, data will be retained even if the power to the device is cut off. With these advantages, it has become one of the most widely adopted memory devices in personal computer and electronic equipment. Most standard electrical products are equipped with some read only memory for holding a normal operation. ROM devices typically include multiple memory cell arrays. Each memory cell array may be visualized as including intersecting word lines and bit lines. Each word and bit line intersection can correspond to one bit of memory. In mask programmable metal oxide semiconductor (MOS) ROM devices, the presence or absence of a MOS transistor at word and bit line intersections distinguishes between a stored logic `0` and logic `1`. A ROM array of memory cells is defined by a number of transistors generally arranged in a grid pattern having a plurality of rows and columns. Each individual transistor of each memory cell of the ROM array is placed between a column of the series of columns and a voltage bus. The column is supplied with power at a first predetermined voltage level, and the voltage bus is supplied with power at a second, different predetermined voltage level. A gate of each transistor of a ROM array is connected to a particular row of the series of rows. ROM memories may be included in any type of integrated circuit (IC). In general, ROM memory is used to hold and make available data or code that will not be altered after IC manufacture. Data or code is programmed into ROM memory during fabrication. According to data storage format, read only memory (ROM) can be further sub-divided into mask ROM, one-time programmable ROM (OTPROM), erasable programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM) and so on. The one-time electrically programmable read only memory (OTEPROM) permits the writing of data into the memory after leaving the factory. The data can be written by the user to fit a particular memory environment, which is more convenient to a user. Since data can be programmed into a one-time programmable ROM outside the factory according to the particular environment the memory is supposed to be working in, one-time programmable ROM is more convenient to work with than the mask ROM. A mask read only memory (Mask ROM) is a semiconductor memory device in which data required is coded during a manufacturing process. There are two types of Mask ROMs: an embedded diffusion-programmable ROM and an embedded metal programmable ROM. Mask ROM is able to write quaternary data into each memory cell transistor. A large amount of information can be stored in small circuits using this mask ROM. A programmable read only memory (PROM) is similar to the mask programmable ROM except that a user may store data values using a PROM programmer. A PROM device is typically manufactured with fusible links at all word and bit line intersections. An erasable programmable read only memory (EPROM) is programmable like a PROM, but can also be erased by exposing it to ultraviolet light. An EPROM integrated circuit is normally housed in a package having a quartz lid, and the EPROM is erased by exposing the EPROM integrated circuit to ultraviolet light passed through the quartz lid. Most PROMs can only be programmed once, typically by blowing open an appropriate word-to-bit connection path. Conversely, EPROMs can be programmed and reprogrammed multiple times. EPROMs are programmed by injecting hot electrons into, for example, a floating gate dielectrically spaced above the transistor channel. The injected electrons can thereafter be removed by irradiating the floating gate with ultraviolet light. Electrically erasable programmable read-only memory (EEPROM) is a non-volatile memory device that allows multiple data writing, reading, and erasing operations. The structure of EEPROMs is similar to that of erasable programmable read-only memories (EPROMS) since both of them have a floating gate for storing charges and a control gate for controlling data access. EEPROM comprise a large number of memory cells having electrically isolated gates (floating gates). Data is stored in the memory cells in the form of charge on the floating gates. The electrical charge modifies the electrical characteristics of the EEPROM cell so that the information can be later read back using the modified electrical characteristics. The electrical charge is typically blocked in a trapping layer that gives to the EEPROM cell its memory capability. A typical EPROM device has a floating gate MOS transistor at all word and bit line intersections. Each MOS transistor has two gates: a floating gate and a non-floating gate. The floating gate is not electrically connected to any conductor, and is surrounded by a high impedance insulating material. The floating gates in the EEPROM device are surrounded by a much thinner insulating layer, and accumulated negative charges on the floating gates can be dissipated by applying a voltage having a polarity opposite that of the programming voltage to the non-floating gates. To program the EPROM device, a high voltage is applied to the non-floating gate at each bit location where a logic value is to be stored. This causes a breakdown in the insulating material and allows a negative charge to accumulate on the floating gate. When the high voltage is removed, the negative charge remains on the floating gate. An electrically erasable programmable read-only memory allows multiple data writing, reading and erasing operations. In addition, the stored data will be retained even after power to the device is removed. The EEPROM is very suitable to be used in an embedded function, such as an address book in cell phones, because of its byte program/erase feature. In addition, EEPROM products usually have good high reliability performance, which increases applicability in application fields requiring repetitive programming, reading, and erasing. With these advantages, it has been broadly applied in personal computer and other electronic equipment. A flash memory is a type of flash EEPROM device that can be erased and reprogrammed in blocks instead of one byte at a time. Flash memory devices are different from EEPROM devices in that electrical erasure involves large sections of, or the entire contents of, a flash memory device. A flash memory cell includes a field effect transistor (FET) having a selection gate, a floating gate, a source and a drain. Data is stored in the flash memory cell by variations in the amount of charge stored in the floating gate, which causes a variation in a threshold voltage (Vt) of the flash memory cell. The data stored in the flash memory cell is read out by applying a selection voltage to a word line connected to the selection gate. The flash memory electrically deletes the data using a same method as that of an electrically erasable and programmable ROM (EEPROM), and the memory may be entirely deleted in one second or several seconds. The data stored in the flash memory is deleted throughout the chip in a block unit, but it is impossible to delete the data in a byte unit. The flash memory stores a correctable control program, which is used instead of an auxiliary memory. The flash memory is divided into a NAND flash memory and a NOR type flash memory. The NOR type flash memory uses an interface method as an SRAM or a ROM to easily construct a circuit with a processor. The NOR flash memory employs memory cell arrays that suppress the parasitic resistance. The NOR flash memory lowers the resistance by providing one through-hole to bit line for two cells connected in parallel. A NAND flash memory device is comprised of memory cells serially connected between a drain selection transistor and a source selection transistor in the unit of 16 or 32 in number. The flash memory cells of the NAND flash memory device include a current path formed between the source and drain on a semiconductor substrate, and a floating gate and a control gate that are connected over the semiconductor substrate with an insulator intervened between them. NAND flash memory devices are typically used as mass data storage devices, and NOR flash memory devices are typically used as information storage devices for high speed data processing. Flash memory devices have achieved a commercial success in an electronic industry because they are able to store data for a relatively long time even without a power supply. Flash memory devices are applicable for multiple operations of data writing, reading and erasing, and have the advantage that stored data will not been vanished even after power supply is cut off. Thus, flash memory devices are widely used as non-volatile memory devices for personal computers and other electronic products. Flash memory devices typically use a one-transistor memory cell that allows for high memory densities, high reliability, and low power consumption. Common uses for flash memory include portable computers, personal digital assistants (PDA), digital cameras, and cellular phones. Program code, system data such as a basic input/output system (BIOS), and other firmware can typically be stored in flash memory devices. Most electronic devices are designed with a single flash memory device. Flash memory devices are finding increasing applications in smart cards for recording, storing and transporting digital information. Flash memory cards are currently used in digital cameras for recording and storing pictures that can be later displayed on personal computers, TVs or printed. Flash memories in smart cards are being used not only for storing data but also for storing application programs such as fingerprint identification, identification cards, health records, transportation programs and many more applications which include encryption for personal security, and also applications such as e-passport, credit card, JAVA card subscriber identity module (SIM).
What is the Job description of a track and field official?
Track judges are placed at the finish line at track meets to see who finishes the race first. Their duty is to watch the lanes to see who's torso, which can be their head, neck, or shoulders, crosses the edge of the finish line first.
Basic rules for swimming?
Some Rules For Swimming Is;1.You Have To Be Atleast 4 Or 5.2.You Have To Have The Following;-Goggles.-Towel.-BathingSuit.-A Pool.-Lifeguard Or Swimming Partner.
What is bradleys free rider track code?
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6af 1nb 6ag,1jo 6pp 1ke 6q4 1l9 6qg 1m9 6qr 1na 6r7 1o9 6ri 1pa 6rt 1qb 6s6 1r9 6se 1s5 6so 1t4 6t6 1u8 6to 1vi 6ue 20n 6v2 221 6vn 23g 70f 250 717 26j 71u 289 72k 2a0 73a 2bl 740 2dc 74n 2f6 75c 2h1 760 2it 76i 2kq 774 2mm 77k 2oj 783 2qg 78g 2sd 78t 2ua 799 307 79l 325 7a1 342 7ac 360 7al 37t 7ar 39r 7b0 3bm 7b2 3di 7b1 3fd 7av 3h7 7aq 3j1 7ai 3kr 7aa 3ml 7a0 3of 79m 3q7 79a 3rv 78t 3tn 78g 3ve 781 415 77h 42r 76v 44h 76c 466 75p,7me lgn 7mf lha,7m6 lsp 7mm lsl,7me lsk 7n2 lsi,7j1 prv 7jj psc 7k9 psq 7l3 pt9 7lu ptp 7mq pu8 7nn pul 7ok pv0 7pj PVC 7qh pvn 7rl q05 7st q0o 7ud q1h 7vq q27 81c q2u 82v q3n 84k q4h 86a q5c 881 q69 89o q76 8bf q83 8d7 q91 8ev qa0 8go qav 8ih qbv 8kb qcv 8m5 qdv 8nt qev 8pm qg0 8rf qh1 8t8 qi2 8v2 qj3 90r qk4 92l ql5 94e qm7 968 qn8 982 qoa 99r qpc 9bl qqe 9df qrg 9f9 qsi 9h3 qtl 9it qun 9kn qvp 9mh r0s 9ob r1u 9q5 r31 9rv r43 9tp r55 9vj r68 a1d r7a a37 r8d a51 r9f a6r rai a8l rbk aaf rcn ac9 rdp ae3 res aft rfu ahn rh1 ajh ri3 alb rj6 an5 rk8 aov rla aqp rmd asj rnf aud roi b07 rpk b21 rqn b3r rrp b5m rss b7h rtu b9c rv1 bb7 s03 bd2 s16 bet s28 bgo s3b bij s4d bke s5g bm9 s6i bo5 s7l bq0 s8n brr s9q btm sas bvh sbv c1d sd1 c38 se4 c53 sf6 c6u sg9 c8p shb cak sie ccg sjg ceb skj cg6 sll ci1 smo cjs snq cln sot cnj spv cpe sr2 cr9 ss4 ct4 st7 cuv sua d0r svd d2m t0h d4h t1k d6c t2n d87 t3q da2 t4t dbu t60 ddp t74 dfk t87 dhf t9a dja tad dl5 tbg dn1 tcj dos tdn,dh7 t8a dhs t8k dih t92 dj8 t9f dju t9s dki taa dl6 tao dlr tb5 dmh tbi dn5 tbs dnq tc5 doe tcg dp1 tct dpj td9 dq2 tdp dqe tea dqm tf0 dqr tfn,dor tdp dp9 te8 dpq ten dq4 tfc dq9 tg0,dqq tfj dqt tg6 dr1 tgq dr3 the,dr3 th9 dr0 ti0 dqv Tim dqs tjb,dq6 tfu dqb tgg dqe th6 dqd thv dq7 Tim dpu tja dpc tjm doj tjq,dqu tj6 dqj tjm dq0 tk1 dpb tk5 dok tka dns tkb dn6 tka dme tk7 dlo tk4 dl1 tk2 dk8 tk3,don tjq do0 tjs dn5 tjs dmd tjp dli tjn dko tjm dk1 tjl djb tjl dim tjq di0 tjt dh8 tki dgi tle dg4 tmb dg3 tn7 dgb tnv dgn toe dh8 toq dhp tp1,dk7 tk3 djm tk7 dj3 tkb dif tkh dhu tks dhj tlf dh7 tm2 dgr tmj dgo tn7,e3v 1bpf e42 1bq4 e3u 1bqq e3u 1brg e3v 1bs4 e40 1bsj,e3v 1bsj e40 1bt5 e41 1btn e40 1bua,e41 1bu7 e44 1buu,e4o 1bpg e4l 1bq3 e4k 1bql e4j 1br7 e4l 1brq e4n 1bsd e4n 1bt1 e4m 1btl e4p 1bu8,e4m 1bu3 e4q 1bul,e4e 1pbs e4j 1pcf e4t 1pcv e59 1pde e5i 1pdt,e4t 1pbj e56 1pc3 e5c 1pck e5n 1pd1 e63 1pde,e5f 1pdr e5r 1pe8,eu6 1rpl eu7 1rq8 eum 1rq8 euk 1rpl,f9d 2c47 f09 2c6e##B f9i 20g7 aj,B fa7 20gg ar,B f84 20h6 b8,B f7g 20h6 3,B f6t 20h6 b8,B f6d 20h5 b4,B f60 20ha av,B f5h 20hc b8,B f52 20h8 b8,B f4h 20he a,B far 20he av,B fb3 20gv b4,B fak 20ha 3,B fan 20h5 b6,B fav 20h8 b3,B fb4 20ha b5,B 7in prg 35,B 7ir pr7 2q,B 7is pqq 2q,B 7il pqd 2q,B 7if pq6 34,B 7ij ppu 33,B 7il ppl 2q,B 7kb pq8 4,B 7kg pql b4,B 7ki pr7 b6,B 7ki prk b5,B 7ke prk 6,B 7ke pro 1j,B 7kd psc f,B 7k7 pql 2,B 7k7 pr5 2,B 7ju pq6 b8,B 7jq pqs 7,B 7js prf b8,B 7js pr9 2,B 7k3 pro 7,B 7jo prq 2,B 7k3 ps9 2,B 7jq ps5 8,B 7jj pqa b8,B 7jd pqq b2,B 7j8 pq6 b8,B 7jo pr5 b8,B 7j9 pr5 b8,B 7j8 prm s,B 7jn ps1 2,B 3na 78h 2s,B 3nl 79d 1d,B 3m8 79g 2c,B 3la 78n 31,B 3l1 79g 2i,B 3l4 7a0 25,B 408 778 16,B 3uv 774 1j,B 3u5 77l 22,B -dah 1bb6 88,B -dan 1bb6 8e,B -da4 1bba 7s,B -da2 1bb3 88,B -d9r 1bav 80,B -dae 1bb3 85,B -aec 1652 92,B -aep 1650 8e,B -aee 1650 8l,B -aef 1653 8t,B -aeh 1652 90,B -795 qke b8,B -7a5 qkg am,B -79q qke b3,B -79f ql1 b4,B -78s qkv 3,B -78j qkv 2,B -77p qkr ar,B -77l qkm b2,B -771 qkn 1,B -76e qke ak,B -769 qlc b5,B -761 qkm at,B -76t ql6 b4,B -77c qkv 4,B -786 ql3 7,B -78s ql3 5,B -79t qkt b1,B -7at qkp d,B -7bp ql4 2,B -7g2 qm6 ap,B -7fj qm6 ao,B -7f6 qm6 b2,B -7er qlu 9,B -7e1 qlp av,B -7cq qlj 5,B -73k qlh am,B -74p qlp ak,B -75u qlp b6,B -76v qls b5,B -780 qlp b5,B -79d qlh b8,B -7am qle b6,B -7bh qlc b8,B -6n8 p9g 6,B -6n8 p8v b8,B -6n3 p8o 2,B -6mt p8h b8,B -6mv p8h 2,B -6n7 p8f 8,B -6mv p9c ar,B -77k rkh b8,B -77c rkl av,B -77t rkn d,B -76q rkl b8,B -76g rkc b8,B -762 rkc aq,B -75s rkf b1,B -76q rkd b8,B -777 rkl b8,B -779 rl0 u,B -76d rl0 ad,B -75a rks ao,B -771 rld b8,B -77v rl6 h,B -78u rl7 3,B -71f rku 9h,B -72k rl0 95,B -741 rl0 9v,B -79k rl6 1a,B -7ai rld 1c,B -7bi rlj 1l,B -403 ifg f,B -3vb if8 b8,B -3vo iek g,B -3vm iem b6,B -406 iet h,B -3vv iev e,B -3uo iep b8,B -3u6 if8 ag,B -3tp ifc av,B -3t8 ifj b5,B -3r5 id9 9n,B -3qh idk 98,B -3pu ie5 93,B -3pj ien 9g,B -3pc ife 95,B -3q4 ifp ao,B -3r9 ifc b4,B -3sc ifn b1,B -3tp ifp b8,B -3v0 ig0 b8,B -408 ift 6,B -41b ig2 i,B -42f ig8 u,B -435 ig2 1i,B -444 ig4 1r,G -142 e1m 5v,G 306 df2 6h,G 30f dfb 68,G 310 df2 6h,G 303 df2 55,G 314 deq 7n,G 308 deh 7e,G 1co e5u s,B -ho 1f ad,B -gt 18 9u,B -h8 1h 9u,B -i2 18 ah,B -h8 1h a8,B -i2 1s a8,B -i0 1s ac,B -ho 20 ac,B -hd 1q 9v,B -hh 1h ai,B -gv 18 9e,B -h6 19 9r,B -g5 1s 9h,B -gg 1h 9q,B -h0 1s a9,B -hf 23 9r,B -i9 2g 9,B -ir 2p a4,B -ja 2r a9,B -k4 38 9v,B -kf 3o 9r,B -mv 26 82,B -mi 30 8e,B -m3 3f 7s,B -lf 45 8e,B -j9 e7 3,B -jf e9 3,B -j7 e7 b8,B -jf ee 7,B -ji eb 5,B -jq ed 4,B -jv e0 c,B -jm e3 b8,B -jm e9 9,B -j2 eg e,B -ku bp 8,B -ko CD 6,B -kc c2 AA,B -k1 ch 9t,B -k3 cq b6,B -i2 f0 9t,B -h5 fq 9k,B -gd go 9o,B -fl h3 9f,B -dt hn 9j,B -au iu 99,B -87 k1 9f,B -4m lf 9c,B -2c m9 97,B i 1b 2q,B b u 38,B -e 17 2q
