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Since the base in an n-p-n transistor is kept very thin, very few electrons get to recombine with holes and escape out of base, most of the electrons are injected from emitter into the collector. As a result, Base-current is very small. Whereas the Collector-current is almost equal to the Emitter-current.
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∙ 12y ago
Ian Batty
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∙ 12y agoBecause a transistor's collector current is proportionally limited by its base current, it can be used as a sort of current-controlled switch. A relatively small flow of electrons sent through the base of the transistor has the ability to exert control over a much larger flow of electrons through the collector.
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∙ 13y agobecause in base region if we improve density of extra material There is more recombination of charge carriers so the current we want,collector current, is very much smaller. This is a big dis advantage.
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∙ 9y ago- The thinner the base the faster the speed of the transistor, due to reduction in transit time.
- If the base is too thick, the device will only act like two back to back diodes and will have no gain.
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∙ 7y agoBy design. The whole IDEA of this type of transistor is for one current to control another one - thus, the transistor can be considered to be a type of amplifier, and it can indeed be used in amplifier circuits.
Munawar Ali Munawar ...
The current in a transistor is very due to the base of transistor is very thin of the order of 10/6m and it has very doping level as compare to the emitter or collector when electron and hole enter into the base region from the emitter the number of recommendation charges is very small reserve voltage VCC is greater than forward voltageVbb:
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Why emitter is heavily doped and base is lightly dopped working of p-n-p transistor?
Emitter is heavily doped because to provide charge carriers to Base & Collector region, Base and Collectors are lightly doped because to accept those charge carriers.
When diode is heavily doped?
base
What is the effect of temperature on hall coefficient of a lightly doped semiconductor?
hall coefficient of a lightly doped semiconductor will decrease with increase in temp as hall coefficient is inversely proportional to number density of charge carriers.
With neat diagram explain the steps involved in the p-well process of CMOS fabrication?
the starting material is either p+ or n+ substrate with a lightly doped epitaxial layer.
How many doped regions in a Bipolar transistor?
3: emitter, base, collectorThere are three regions but to be absolutely picky I think only two of them need be doped.Nope: they MUST be doped NPN or PNP. If any are undoped it will not function as a transistor.
Why emitter is heavily doped and base is lightly dopped working of p-n-p transistor?
Emitter is heavily doped because to provide charge carriers to Base & Collector region, Base and Collectors are lightly doped because to accept those charge carriers.
Why base of transistor is lightly doped?
The width of the base is very thin to increase the majority carrier concentration gradient in the base region thereby enhancing the diffusion current and also to reduce the number of majority carriers lost due to recombination in the base.
When diode is heavily doped?
base
Why inner two layers of scr are lightly doped and are wide?
Explain why the innerlayer two layers of an scr are lightly doprd and are
What part of transistor are moderately doped?
base
What is the effect of temperature on hall coefficient of a lightly doped semiconductor?
hall coefficient of a lightly doped semiconductor will decrease with increase in temp as hall coefficient is inversely proportional to number density of charge carriers.
What are degenerate and non degenerate semiconductors?
Non degenerate semiconductors are those which: -are lightly doped -have less value of electron and hole concentration -violate Pauli's exclusion principle Degenerate semiconductors are those which: -are highly doped -have high value of electron and hole concentration -follow Pauli's exclusion principle
With neat diagram explain the steps involved in the p-well process of CMOS fabrication?
the starting material is either p+ or n+ substrate with a lightly doped epitaxial layer.
How many doped regions in a Bipolar transistor?
3: emitter, base, collectorThere are three regions but to be absolutely picky I think only two of them need be doped.Nope: they MUST be doped NPN or PNP. If any are undoped it will not function as a transistor.
What is the difference between phosphorus doped and gallium doped semiconductors?
phosphorus doped semiconductor will be N type.gallium doped semiconductor will be P type.There are also other differences due to the different size of the dopant atoms.
Describe the difference between a UJT and a PUT?
i. Constructional structures The UJT is made up of a lightly doped n-region known as the base region onto which is joined a small heavily doped p-region called the emmitter. The PUT on the other hand is a four layer device similar to an SCR except that the gate terminal of the PUT is connected to the n-region adjacent to the anode. ii.Operation The intrinsic stand-off ratio of a UJT is fixed hence operating characteristics can not be alterd. The PUT, on the other hand has operating characteristics that can be altered. These include base-base resistance,intrinsic stand-off voltage, valley current and peak current and all these can be altered by setting the values of two external resistors
Is it considered second base when he cuddles you and has his hand lightly on your breast?
Yes, petting above the waist is 2d base.
