The Energy level of P-type semiconductor is higher than that of N-type semiconductor because the Dopant impurity always creates energy state near the Conduction Band while the Acceptor Impurity always creates energy state near the Valence Band.
Also the answer could be found in the reason that very few electrons gain thermal energy to leap the forbidden energy gap, thus more the electrons more will be the probability of gaining energy and leap to conduction band from valence band and as we know p-type semiconductors have more valence electrons than n-type semiconductors.
Usually the power of devices to control are connected to a positive rail. So yes there are more devices made of NPN the PNP for that reason alone. i GUESS MUST THINK POSITIVE.
...It is due to the fact that at higher temperatures, the energy in the semiconductor is greater than Eg by a considerable amount, meaning that the conduction band is more full. At these high temperatures, the dopants' role on electron-hole pairs is negligible.
at higher values of temperature the intrinsic carrier concentration become comparable to or greater than doping concentration in extrinsic semiconductors. thus majority and minority carrier concentration increases with increase in temperature and it behaves like intrinsic semiconductor.
Because the energy of electrons transfer from semiconductor to metal side have more energy than the fermi energy of electrons in metal side. That's why these are called hot carrier diodes
the binary semiconductors used to make LEDs have forward bias voltages from 1.5V to 6V depending on color (1.5V for IR-red to 6V for blue-UV) because the bandgap voltage of the semiconductor is higher than silicon. This higher bandgap is where the photons generated get their energy from. germanium has a lower forward bias voltage of 0.2V because the bandgap voltage is lower. metal-semiconductor contacts, like point contact diodes and schottky barrier diodes, can have forward bias voltages under 0.1V
Resistivity is the resistance, in ohms, between the opposite faces of a 1-metre-cube of a material. For metals, resistivity is in the region of 0.0000001 ohm-metre. For semiconductors, it is much higher - it is in the region of 0.01 ohm-metres.
gamma rays have a way stonger/higher energy level then x rays
An atom has multiple energy levels. When an atom has more electrons than it can fit into an energy level, then it puts them into the next higher energy level.
The second level is associated with higher energy than the first is. Keep increasing the energy of an electron enough, and eventually it breaks free of the atom completely.
An atom has multiple energy levels. When an atom has more electrons than it can fit into an energy level, then it puts them into the next higher energy level.
The nuclear energy available in the hydrogen. This is a kind of potential energy. Hydrogen has a higher energy level than helium.
The nuclear energy available in the hydrogen. This is a kind of potential energy. Hydrogen has a higher energy level than helium.
The answer to this question is that the oxidation number for the 2nd energy level is +2. This is because the 2nd energy level is the second highest energy level in an atom, and thus has a higher oxidation number than the 1st energy level. The oxidation number for the 2nd energy level is determined by the number of electrons in the 2nd energy level.
More energy have the electrons in the second level of energy.
...It is due to the fact that at higher temperatures, the energy in the semiconductor is greater than Eg by a considerable amount, meaning that the conduction band is more full. At these high temperatures, the dopants' role on electron-hole pairs is negligible.
They are smaller in magnitude than those between lower energy levels.
No you can not get Pokemon higher than level 100.
From the nuclear forces. An U-235 atom has a higher energy level than its daughter products; this is used in nuclear fission.