Silicon is preferred over germanium in semiconductor applications because it has a higher melting point, better thermal stability, and can form a native oxide layer for insulation. Additionally, silicon has a wider bandgap, making it more suitable for high-temperature and high-power electronic devices.
Silicon is preferred over germanium because it is more abundant, less costly, and has a higher thermal stability. Silicon also forms a better oxide layer, making it more suitable for integrated circuit applications. Additionally, silicon has better electron mobility and is less susceptible to thermal runaway compared to germanium.
Removing silicon dioxide (SiO2) as slag is important because it can adversely affect the properties of the final product. SiO2 can lead to impurities, reduce the strength and durability of the material, and affect its overall performance. Removing SiO2 helps to ensure the quality and integrity of the end product.
Silicon does not exhibit catenation property like carbon because of the larger size of silicon atoms compared to carbon atoms. This larger size results in weaker silicon-silicon bonds, making it less favorable for silicon to form long chains or rings like carbon does. Additionally, silicon's lower electronegativity compared to carbon leads to weaker bonding interactions, further reducing its tendency to exhibit catenation.
The semi conductors like Si, Ga, Ge are purified by Zone refining. it is also known as fractional crystallisation method.It works according to the principle that when an impure metal is melted and allowed to solidify, the impurity move away from the solid region and prefer to be distributed in the molten region.
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Silicon is preferred over germanium because it is more abundant, less costly, and has a higher thermal stability. Silicon also forms a better oxide layer, making it more suitable for integrated circuit applications. Additionally, silicon has better electron mobility and is less susceptible to thermal runaway compared to germanium.
Four reasons. First, it is a LOT cheaper and easier to get silicon. Germanium is a trace element in rocks. You need to mine and process lots of rock to get any germanium. Silicon is also known as sand--very easy to find. Second, germanium is heat sensitive. It's harder to solder a germanium device in than a silicon one because the heat can mess up the germanium. Germanium devices pretty much have to be soldered in by hand because you have to heat sink them, whereas silicon devices can be soldered in a soldering machine. Third, germanium's hazardous and silicon is generally not. People eat off glass plates, which are made from silicon. They do NOT eat from germanium plates, if they could even afford them. And fourth, germanium has a variable voltage drop--the higher the voltage, the greater the drop. If you pump 5000 volts into a silicon diode, you're going to get 4999.3v out the other side.
the silicon is the insulator
AnswerSilicon is abundant in nature as SiO2(sand).Getting the Si from SiO2 is comparatively easier than other semiconductors like Ge.And Silicon is a better conductor at room temperature.valence electron in germanium are in fourth shell whereas on silicon valence electron is in third shell.germanium valence electron are at higher energy level than silicon .hence germanium valence electron will need smaller amount of energy to escape form the atom due to this germanium more number of electron pair than silicon . hence leakage current is more.this property makes germanium more unstable at high temperature.
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We use chips of silicon in computers and mobile phones and many other devices because we can control the conductivity of silicon. We cannot control the conductivity of metal conductors -- they are always highly conductive. The really magical thing about silicon is that it can be doped such that a few regions (the "transistor channels") can be actively switched from conductive to insulating, millions of times per second. I wouldn't say I prefer one over the other, though -- all those devices invariably *also* have many metal conductors.
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The 2N5777 is a Darlington silicon NPN photo detector, or, if you prefer a photoDarlington. A link is provided to a bit of data on this device.
These elements are all located in Group 14 of the periodic table and share similar chemical properties, such as forming covalent bonds. They can exhibit variable oxidation states, but generally prefer a +4 oxidation state. Additionally, they are known to form compounds with themselves and other elements in the same group.