Simple, Use the multi-meter , switch to the diode option then connect the positive wire to the positive of diode n negative to the negative ( +ve wire red, -ve wire black) if the there is a reading of =~0.7V then it is silicon. and if it is =~ 0.3V then it is germanium.
silicon has a wider bandgap than germenium .silicon jeakage current small, easily available then Ga and break down voltage is more. knee voltage of si is 0.7and Ga is having 0.3then Si is very useful.
Germanium does no "do" anything.
neither, germanium is a semiconductor
It is the middle portion of the transistor
Silicon is preferred over germanium because it is more abundant, less costly, and has a higher thermal stability. Silicon also forms a better oxide layer, making it more suitable for integrated circuit applications. Additionally, silicon has better electron mobility and is less susceptible to thermal runaway compared to germanium.
silicon is less sensitive towards temperature.It costs low compared to germanium,
A germanium diode has a lower forward voltage drop compared to a silicon diode, typically around 0.3V for germanium and 0.7V for silicon. Germanium diodes also have a higher reverse current leakage compared to silicon diodes.
Germanium has a smaller bandgap compared to silicon, leading to higher intrinsic carrier concentration and hence greater leakage current. Additionally, germanium has a higher intrinsic carrier mobility, which can further contribute to increased leakage current compared to silicon.
Germanium has a smaller band gap compared to silicon, allowing it to conduct electricity more effectively. Its crystal structure also has a closer packing arrangement of atoms compared to silicon, making it more metallic in nature. Overall, these factors contribute to germanium exhibiting more metallic properties than silicon.
The maximum spectral response of germanium is in the infrared region, while the maximum spectral response of silicon is in the visible light region. Germanium has a broader spectral response range compared to silicon.
The difference in breakdown voltage between silicon (0.7V) and germanium (0.3V) is mainly due to their different band gap energies. Silicon has a larger band gap compared to germanium, resulting in a higher breakdown voltage. This means that silicon can withstand a higher voltage before breaking down compared to germanium.
The depletion region is smaller in germanium compared to silicon because germanium has a lower bandgap energy, meaning that charge carriers can easily cross the depletion region and recombine on the other side. This results in a smaller built-in potential and a smaller depletion region in germanium.
The higher leakage current in germanium compared to silicon is mainly due to its lower bandgap energy, which allows more thermally generated carriers to flow through at room temperature. Additionally, germanium has lower electron mobility and higher intrinsic carrier concentration than silicon, contributing to increased leakage current.
products made by silicon are more stable than those made by germanium
the leakage current of silicon is less when compared with the leakage current of germanium.. hence scr's are made up of silicon than germanium.. hope tis one is useful to u all!- Vignesh.L(engineer, 1st year)
Each has four valence electrons, but germanium will at a given temperature have more free electrons and a higher conductivity. Silicon is by far the more widely used semiconductor for electronics, partly because it can be used at much higher temperatures than germanium.