I would make this guess... in silicon type (IV) a trivalent doping material introduces an energy level just above the valence band, since crudely it is slightly less binding to any local electron. Similarly for a pentavalent doping material the energy level is slightly below the conduction band since is weakly binding. Using that logic a pentavalent dopant would introduce an energy level somewhere in between therefore would not be as useful for a diode/PN-Junction infact they impede the lifetime of holes/electrons in a semiconductor. But I'm no solid state physicist so don't quote me.
Common donor impurities in silicon include phosphorus and arsenic. These impurities have one more valence electron than silicon, making them donate an extra electron to the silicon crystal lattice, resulting in n-type doping.
Pure silicon is intrinsic. It has a high resitivity which means it is a poor conductor of electricity in this state. The dopant that is introduced during the doping process can be arsenic, boron or phosphorous. These are the traditional choices to dope the intrinsically pure silicon. After the pure silicon becomes doped its electrical properties change. The main change is it has a lower resistivity and will conduct electricity. This is why silicon is called a semiconductor.
Extrinsic silicon is just silicon that has been doped. So it has different semiconducting propeties from pure (intrinsic) silicon. Why anyone needed to introduce the words intrinsic and extrinsic into the subject always baffled me.
Silicon dioxide contains only silicon and oxygen - no carbon., The only carbon in a sample labelled " silicon dioxide", would be an impurity or contaminant probably on the surface
in silicon or germanium, the valence shell contain 4 electrons. in order to attain stability, they need 4 more electrons, so we doping it either with trivalent or pentavalent impurities. if we are doping semiconductor with any of these, we call it as an extrinsic semiconductor if we are using pentavalent impurity such as phosphorous, there will be an extra electron,which will go to conduction band. we know electron has negative charge therefore we call it as n-type semiconductor
Common donor impurities in silicon include phosphorus and arsenic. These impurities have one more valence electron than silicon, making them donate an extra electron to the silicon crystal lattice, resulting in n-type doping.
My thinking is ... If intrinsinc semicoductor is doped with Hexavalent Impurity, then energy level of outermost orbit of hexavalent atom, will fall below than that of pentavalent atom, so more amout of energy will be required to move this newly generated electron to move from fermi level to conduction band of semicondoctor. And vice versa for Bavalent.
will there be any structural changes when divalent is doped with trivalent
it will increase
Called "doping" forget specifics--studied long ag
Trivalent impurity is used to create a free electron when bonded with a silicon crystal.
A doped crystal is a semiconductor crystal that has been intentionally impurity-doped, meaning that certain impurity atoms have been added to its structure during the manufacturing process. This deliberate introduction of impurities alters the electrical properties of the crystal, making it useful for various electronic applications such as in transistors or diodes.
Atoms are not added but rather the material (usually silicon) is doped with an impurity like germanium to either add an extra electron (n-material) or be missing an electron (p-material) in the outer valance shell.
Silicon has 4 valence electrons. When a penta-valent impurity like phosphorus is added, conduction takes place through the excess electron, the donor. Arsenic is another good example of a donor impurity
A tetravalent impurity refers to an impurity that introduces four valence electrons into a material's crystal lattice. These impurities can significantly impact the electrical and optical properties of the material due to their ability to alter the number of charge carriers within the material. Examples include elements like silicon or germanium in a crystal lattice of another material.
semiconductor.
Phosphorus, when added as an impurity into silicon, will produce an n-type semiconductor. This is because phosphorus has five valence electrons compared to silicon's four, resulting in an extra electron that can contribute to the conductivity of the material.