N-type semiconductor started off as a non-conducting material which, having been doped with a pentavalent element, has become a conductor due to an abundance of free electrons that act as charge carriers.
When light shines on a semiconductor p-n junction, the energy from photons can create electron-hole pairs, generating a potential difference across the junction. This potential difference can create an electric current when connected to an external circuit, allowing for the generation of electricity through the photovoltaic effect.
If current is plotted on the X-axis in a graph, it will be the independent variable, meaning that changes in current will be shown along the X-axis. This can help visualize how changes in current affect other variables plotted on the Y-axis, providing insights into the relationship between current and the dependent variable.
The formula for calculating working capital is: Working Capital = Current Assets - Current Liabilities. It represents a company's ability to cover its short-term obligations with its current assets. A positive working capital indicates that a company has enough assets to cover its liabilities, while a negative working capital may suggest liquidity issues.
Resistors are used in various daily life applications such as in household appliances to control the flow of current, in electronic devices to limit current and voltage, and in heating elements to regulate temperature. They are also used in LEDs to protect them from too much current and in audio systems to adjust volume levels.
bipolar devices use both majority and minority current carriersunipolar devices use only majority current carriers
Although a small part of the transistor current is due to the flow of majority carriers, most of the transistor current is due to the flow of minority carriers and so BJTs are classified as 'minority-carrier' devices.
Free electrons and holes are the charge carriers-not only in intrinsic semiconductors(these are the purest form of semiconductors-typically as pure as can be made available with the present technology) but also in extrinsic semiconductors(doped semiconductors).In intrinsic semiconductors,electron-hole pairs are created due to the natural processes like-absorption of heat energy from the surroundingsabsorption of energy from photons.this absorbed energy results in breakdown ofcovalant bonds in intrinsic semiconductors as a result of which electron-hole pairs are created.It is this electron hole pair which is responsible for carrying the current through the intrinsic semiconductor when a potential difference is applied across it.In extrinsic semiconductor the case is slightly different-here, we have-majority charge carriers and minority charge carriers.in an n-type semiconductor-majority charge carriers are the electrons contributed by the pentavalent impurities while the minority charge carriers are the holes which are generated as electron-hole pairs due to natural processes discussed above.in p-type semiconductor-majority charge carriers are the holes contributed by trivalent impuritieswhereas the minority charge carriers are the electronswhich are generated as electron-hole pairs due to natural processes discussed above.these are the majority charge carriers which contribute heavily in the flow of current through the extrinsic semiconductors than the minority charge carriers.I suggest you to please go through mass action law and law of electrical neutrality of semiconductors for better understanding.
There are two recognized types of charge carriers insemiconductors. One iselectrons, which carry a negativeelectric charge. In addition, it is convenient to treat the traveling vacancies in thevalence bandelectron population (holes) as the second type of charge carrier, which carry a positive charge equal in magnitude to that of an electron
in FET the conduction is due to the majority carriers. here the minority carrier conduction doesn't takes place as in BJT. hence the current flow depends only on the majority carriers . hence ther is no thermal runaway in FET.
The p-region of a diode contains an abundance of holes, but also contains a small percentage of electrons. Similarly, the n-region also contains a small percentage of holes. These are knows as the minority carriers. Again, like charges repel, so when the diode is reverse biased, these minority carriers will migrate toward the boundary region. The minority carriers will recombine at the boundary region, and thus enable an electric current. Because these carriers are few in number (orders of magnitude less than the majority carriers), this current is very small. This represents the leakage current of a diode. The mobility of minority carriers increases with temperature, and heating a diode will cause greater numbers of minority carriers to congregate at the boundary region. This will increase leakage current. Surface contamination on the diode may also allow small amounts of electricity to be conducted, again causing leakage.
In diode some current flows for the presence of the minority charge carriers. This current is known as reverse saturated current. This is generally measured by picoampere. This current is independent of reverse voltage. It only depends on the thermal excitation of the minority carriers
In a photo-diode when light is incident, the fractional increase in the majority carriers is much less than the fractional increase in the minority carriers. Consequently, the fractional change due to the photo-effects on the minority carrier dominated reverse bias current is more easily measurable than the fractional change due to the photo-effects on the majority carrier dominated forward bias current. Hence, photo-diodes are preferred to be used in the reverse bias condition to easily observe the variation of current with intensity.
At absolute zero, semiconductor atoms come to a stop due to lack of thermal energy, reducing the number of free charge carriers available for conduction. Without free charge carriers, current cannot flow through the semiconductor, resulting in the cessation of electrical conduction at absolute zero.
due to minority carriers
harry reid
Forward Bias Condition: Diode allows only one way direction, the reason for majority carriers flows to minority carrier. higher to lower that's it. Reverse Bias Condtion: Reverse direction also flows the current, That is Leakage current. it should be minimun for good diode. For Practical Example: See field work.