in FET the conduction is due to the majority carriers. here the minority carrier conduction doesn't takes place as in BJT. hence the current flow depends only on the majority carriers . hence ther is no thermal runaway in FET.
mobility decreases
All types electromechanical and electronics. It is a design precaution to insure that cannot be any thermal runaway
mainly i will tell ttwo advantages:- 1)in FET "thermal runaway" never occurs but in bjt it occurs easily...thermal runaway means overheating and damage of fet due to different biasing voltages.. 2) since FET is a unipolar device so only one carrier type is required here ,but bjt is a bipolar device .. 3) FET is smaller in size than BJT of same rating. i mean to say that at the place of 10 bjts we can use 90 FETs ..so area cosumption is less
FET is a field effect transistor, abbreviated to FET. There are two basic types of FET: a junction FET abbreviated to JFET and an insulated gate FET , abbreviated to IGFET. The most common type of IGFET is a metal-oxide silicon FET, Known as a MOSFET. Modern microprocessors may contain tens of millions of MOSFETs.
FET stands for field-effect transistor.
Thermal runaway is not possible in FET because of?
mobility decreases
pain
The excess heat produced at the collector base junction may even burn and destroy the transistor.This situation is called thermal runaway.
when u masturbrate
because they are.
they dont
very safely
very safely
caz they have a positive temperature coefficient
All types electromechanical and electronics. It is a design precaution to insure that cannot be any thermal runaway
Thermal runaway is where the biasing and operating point is such that the temperature causes the gain to increase, which causes the temperature to increase, which causes the gain to increase, in a vicious circle, leading to destruction of the BJT. Proper biasing and gain management can prevent this from occurring.