FET stands for Field Effect Transistor. The name FET comes because the gate current of a field effect transistor is zero and current present in the source conductor is due to an electric field produced by the substrate material placed between the gate and the source.
Field Effect Transistor (FET) was invented in 1926 by Julius E. Lilienfeld.
no. its unipolar
diodes
The Gate.
mobility decreases
in FET the conduction is due to the majority carriers. here the minority carrier conduction doesn't takes place as in BJT. hence the current flow depends only on the majority carriers . hence ther is no thermal runaway in FET.
Yes, it is possible for you to study Senior Phase teaching in FET. Further Education and Training offers several teaching programs for students completing their degree.
because
mainly i will tell ttwo advantages:- 1)in FET "thermal runaway" never occurs but in bjt it occurs easily...thermal runaway means overheating and damage of fet due to different biasing voltages.. 2) since FET is a unipolar device so only one carrier type is required here ,but bjt is a bipolar device .. 3) FET is smaller in size than BJT of same rating. i mean to say that at the place of 10 bjts we can use 90 FETs ..so area cosumption is less
explain all the parameters of fet
because the fet is made out of carbon metal oxide and the bjt is made out of silicon or germanium
A FET is called a square-law device because of the relationship of ID to the square of a term containing VGS.
Fet's population is 9,485.
FET is a field effect transistor, abbreviated to FET. There are two basic types of FET: a junction FET abbreviated to JFET and an insulated gate FET , abbreviated to IGFET. The most common type of IGFET is a metal-oxide silicon FET, Known as a MOSFET. Modern microprocessors may contain tens of millions of MOSFETs.
A. A. Fet has written: 'Volshebnye zvuki'
Fet-Mats died in 1677.