because the fet is made out of carbon metal oxide and the bjt is made out of silicon or germanium
Advantages:- 1- mosfet are small compare to bjt's so it fabricated easily and space saving scheme on the ic's 2- mosfet's input impedance are very high so they do not load the circuits. loading effect doesn't arise. 3- operating frequency is very high so may be used at higher frequencies. 4- used in digital circuits for it's reliability. 5- effect of noise is less than bjt. so high signal to noise ratio. 6-mosfets are unipolar devices so reverse saturation current doesn't exist. 7- it consume less D.C power rather than BJT. Disadvantages:- handling is not easy- Mosfet is very sensitive to electrostatic charge so it may be destroy when you touch the pins of a mosfet devices by hand. trans conductance is low than BJT.
1-BJT is bipolar while JFET is unipolar. 2-BJT has low input impedence while JFET has high input impedence. 3-JFET has low power discipation as compared to BJT. 4-JFET has low noise as compared to BJT. 5-BJT is current controlled while JFET is voltage controlled. 6-JFET is mostly used in digital circuits.
They are NPN and PNP. BJT mean bipolar junction transistors. there are two P-N junctions in BJT transisters.
sit on dick
You can use an npn or a pnp bjt in a common emitter amplifier circuit. The decision of which one to use is based on whether you want the collector and base to be more positive (npn) or more negative (pnp) than the emitter.
Advantages:- 1- mosfet are small compare to bjt's so it fabricated easily and space saving scheme on the ic's 2- mosfet's input impedance are very high so they do not load the circuits. loading effect doesn't arise. 3- operating frequency is very high so may be used at higher frequencies. 4- used in digital circuits for it's reliability. 5- effect of noise is less than bjt. so high signal to noise ratio. 6-mosfets are unipolar devices so reverse saturation current doesn't exist. 7- it consume less D.C power rather than BJT. Disadvantages:- handling is not easy- Mosfet is very sensitive to electrostatic charge so it may be destroy when you touch the pins of a mosfet devices by hand. trans conductance is low than BJT.
FETs (Field-Effect Transistors) are generally less noisy than BJTs (Bipolar Junction Transistors) because they operate using an electric field to control current flow, which results in lower thermal noise and reduced flicker noise. FETs have higher input impedance, leading to lower current draw and consequently less thermal agitation of charge carriers. Additionally, the absence of minority carrier injection in FETs minimizes noise generation compared to BJTs, which rely on charge carriers that can introduce more noise.
generally bjt is faster than fets...because of many intrinsic junction capacitances between ...source and drain and bulk and gate,,,.. but now a days due to advancement in scaling fet is reduced in size sooo much that it became faster than bjt... mosfet is faster because of scaling. small channel length. even though it is slower but distance to be travelled is less
Advantages:- 1- mosfet are small compare to bjt's so it fabricated easily and space saving scheme on the ic's 2- mosfet's input impedance are very high so they do not load the circuits. loading effect doesn't arise. 3- operating frequency is very high so may be used at higher frequencies. 4- used in digital circuits for it's reliability. 5- effect of noise is less than bjt. so high signal to noise ratio. 6-mosfets are unipolar devices so reverse saturation current doesn't exist. 7- it consume less D.C power rather than BJT. Disadvantages:- handling is not easy- Mosfet is very sensitive to electrostatic charge so it may be destroy when you touch the pins of a mosfet devices by hand. trans conductance is low than BJT.
The signal gain of a CE BJT amplifier is hFe or collector resistance divided by emitter resistance, whichever is less.
Unless it is some leet speak term I am not aware of, BJTstands for Bipolar Junction Transistor or (less common) Business Japanese Proficiency Test.
You dont. A UJT is a much simple device than either of those BJT's Maybe you want to make a multivibrator out of BJT's?
Disadvantage:Easy to damage when compared to BJT
BJT stands for bipolar junction transistor because it is composed of two types of semiconductors (P and N-type) rather than just one type like a unipolar transistor. This allows for both electron and hole current flow in the device, giving it its bipolar characteristic.
Bipolar junction transistor(BJT)
mainly i will tell ttwo advantages:- 1)in FET "thermal runaway" never occurs but in bjt it occurs easily...thermal runaway means overheating and damage of fet due to different biasing voltages.. 2) since FET is a unipolar device so only one carrier type is required here ,but bjt is a bipolar device .. 3) FET is smaller in size than BJT of same rating. i mean to say that at the place of 10 bjts we can use 90 FETs ..so area cosumption is less
No. A unijunction transistor (UJT) is entirely different in design and application than a bipolar junction transistor (BJT). The UJT works on the principle of voltage modulation of the effective substrate resistance, while the BJT works on the principle of current amplification from one junction to the other, usually base-emitter to collector-emitter.