You can use an npn or a pnp bjt in a common emitter amplifier circuit. The decision of which one to use is based on whether you want the collector and base to be more positive (npn) or more negative (pnp) than the emitter.
They are NPN and PNP. BJT mean bipolar junction transistors. there are two P-N junctions in BJT transisters.
because the fet is made out of carbon metal oxide and the bjt is made out of silicon or germanium
BJT & FET parameters are temperature dependent. In BJT the collector junction resistance decreasing ( collector current increasing) with temperature raise.Due to the highe temperature & current transistor will damage quickly. In FET drain resistance increasing (drain current decreasing ) with increasing temperature.Due to this property it will not damage easily. We can say from the above two statements FET is more temperature stable.FET can use in highe temperature applications.
Asking about biasing of the emitter alone does not make sense. When you talk about bias, you talk about a junction, such as emitter-base or emitter-collector or base-collector. In a bipolar junction transistor (BJT) both the emitter-base and emitter-collector need to be forward biased, otherwise you are operating the BJT in cutoff mode. Certainly, if you intend to operate the BJT as a switch, then reverse bias for emitter-base (actually, zero bias) could well be one of the valid states, corresponding to a cutoff condition for emitter-collector. However, operation in linear mode, the other normal way to use a BJT, requires that both the emitter-base and the emitter-collector be forward biased. Of course, depending on the ratio of emitter-base to emitter-collector versus hFe, you could also be saturated, which is a non-linear mode, i.e. an on switch.
actually I prefer a bjt
Cut-off and saturation
Bjt is bipolar because in bjt the conduction of current is due to the electrons as well as holes
A normal configuration for a BJT is Class A Common Emitter. In this configuration, the BJT operates as an inverting amplifier. Driven into saturation, it is a inverting switch, hence the designation NOT gate.Transistor can act as a gate. But its not a gate. In BJT(Bipolar Junction Transister) type transisters there are two P-N juntions. That means if we need we can use it as a NOT gate. Actually gate ICs (Intergrated circuits) are also build using transistors. (Example : TTL(transister-transister logic))
A transistor (bipolar junction transistor BJT) will only conduct in ONE DIRECTION. And the voltage drop is not Ohmic - it is *NOT* strictly related to current flow. If you're referring to a Field-Effect Transitor (JFET, IGFET, MOSFET, etc), then the device may be able to be used in a bidirectional circuit. But the question stated "transistor", which is understood to be a BJT.
Disadvantage:Easy to damage when compared to BJT
Bipolar junction transistor(BJT)
the common collector can use as voltage buffer
It helps us to select the Q - point of the BJT, MOSFET etc.
Mainly there are two types of transistors. They are BJT (Bipolar Junction Transistors) and FET(Field Effect Transisters). In BJT, there are two types called PNP and NPN. Actually NPN means a BJT transister.
You can use an npn or a pnp bjt in a common emitter amplifier circuit. The decision of which one to use is based on whether you want the collector and base to be more positive (npn) or more negative (pnp) than the emitter.
when the switch the emitter-base junection is an opnd circut and heance the value of input or base curent is zero.