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Avalanche photodiodes (APDs) are photo detectors that can be regarded as the semiconductor analog to photomultiplier's. By applying a high reverse bias voltage (typically 100-200 V in silicon), APDs show an internal current gain effect (around 100) due to impact ionization (avalanche effect). However, some silicon APDs employ alternative doping and beveling techniques compared to traditional APDs that allow greater voltage to be applied (> 1500 V) before breakdown is reached and hence a greater operating gain (> 1000). In general, the higher the reverse voltage the higher the gain. Among the various expressions for the APD multiplication factor (M), an instructive expression is given by the formula :

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What is the effect of temperature on photodiode?

photodiodes are basically reverse biased diodes with optical windows that allow like to shine on the PN junction. Like any diode, the leakage current (otherwise known as a photodiodes 'dark' current) increases exponentually with temperature in accordance to William Shockley's idea diode eqation. The other effect in a photo diode is the probability of a photon of a certain energy allowing an electron to cross the PN junction. This is known as the quantum efficiency of the photodiode. Because increasing temperatures increase the vibration of the silicon atoms, making them easier to be knocked loose by a photon. Thus the quantum efficiency of a photodiode will increase with tempature, as well as the thermally induced noise. photodiodes are basically reverse biased diodes with optical windows that allow like to shine on the PN junction. Like any diode, the leakage current (otherwise known as a photodiodes 'dark' current) increases exponentually with temperature in accordance to William Shockley's idea diode eqation. The other effect in a photo diode is the probability of a photon of a certain energy allowing an electron to cross the PN junction. This is known as the quantum efficiency of the photodiode. Because increasing temperatures increase the vibration of the silicon atoms, making them easier to be knocked loose by a photon. Thus the quantum efficiency of a photodiode will increase with tempature, as well as the thermally induced noise. photodiodes are basically reverse biased diodes with optical windows that allow like to shine on the PN junction. Like any diode, the leakage current (otherwise known as a photodiodes 'dark' current) increases exponentually with temperature in accordance to William Shockley's idea diode eqation. The other effect in a photo diode is the probability of a photon of a certain energy allowing an electron to cross the PN junction. This is known as the quantum efficiency of the photodiode. Because increasing temperatures increase the vibration of the silicon atoms, making them easier to be knocked loose by a photon. Thus the quantum efficiency of a photodiode will increase with tempature, as well as the thermally induced noise.


What is photo transistor characteristics?

Photo transistor always work with solar power


What is photo detector?

A photo detector is a sensor of light or other electromagnetic energy. See the link below for more info.


What is the working principle of photoelectric transducer?

photo electric transducer


What is the emitter base collector in 2N5777 photo transistors?

1st pin is emitter then collector and base

Related questions

A silicon avalanche photo diode is fabricated by what process?

A silicon avalanche photo diode is fabricated by the process called impact ionization.


What is the disadvantage and advantage of photo diode and transistor?

photo diode donot work for long distance photo diode act as a receiver


What is the different between photo-diode and LED?

A Photo-diode is used to receive light. whereas the L.E.D. is a Light Emitting Diode.


Television signals are converted into light signals by?

Laser Diode. photo diode


What type of diode produces an electrical response when subjected to light?

A photo diode


Why is Avalanche photo diode used when compared to PIN diode?

The output current of a PIN diode is proportional to the light incident . Whereas in APD due to internal multiplication (Avalanche multiplication) of primary photocurrent, higher gains are possible. A small signal current output from the pin diode are to be amplified before applying to next associated receiver circuit. This includes thermal noise in the main signal, giving lower, receiver sensitivity. In case of APD, photocurrent is multiplied before encountering the thermal noise amplifier, giving increased receiver sensitivity.


What is difference between a diode and a photo diode?

diodediode conducts by applying certain voltagephoto diodephoto diode conducts when it is exposed to sun light


Is the 2N5777 photo diode an APD or a pin diode?

The 2N5777 is a Darlington silicon NPN photo detector, or, if you prefer a photoDarlington. A link is provided to a bit of data on this device.


What is dark current in photo diode?

yo mamas ass


How to turn off a circuit with photodiode?

with a simple led and photo diode


What is photo diode?

in colleges for GEDS assignment which is well hard mate!


What is the difference between mosfet and photo diode?

the current in mosfet is controlled by electric field where as in poto diode is controlled by intensity of light