A silicon avalanche photo diode is fabricated by the process called impact ionization.
A germanium diode has a lower forward voltage drop compared to a silicon diode, typically around 0.3V for germanium and 0.7V for silicon. Germanium diodes also have a higher reverse current leakage compared to silicon diodes.
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A silicon diode is a tiny electronic component having two terminals, usually a switch or limiting device.
a bidirectional light-sensitive avalanche diode
The built is voltage would be lower than silicon diode,more leakage or reverse saturation current,poor thermal stability,high noise and greater conduction in comparison to silicon diodes.
Light Emitting Diode (LED) & the Avalanche Diode. These are two types of diodes ,but there are more
The entire 1N40xx series of power diodes are all silicon. The OA79 small signal diode is germanium.
It is not 'Cutting voltage' but it is Cut-in voltage'. It is the voltage at which the diode turns ON. For silicon it is 0.7v. After reaching 0.7V diode current starts increasing rapidly for little increase in voltage.
the cut in vol for silicon diode is 0.7 where as germaium is around 0.3 because of their construction( the ratio of majority n minority carreirs)
SILICON same as any other diode but with different characteristics
zener breakdown and avalanche breakdown.
0.7 The voltage across a silicon diode when it is forward biased should be greater than or equal (>=) 0.7volts.