It is not 'Cutting voltage' but it is Cut-in voltage'. It is the voltage at which the diode turns ON. For silicon it is 0.7v. After reaching 0.7V diode current starts increasing rapidly for little increase in voltage.
Silicon diodes ARE used in reverse bias. This is the mode in which they do not conduct, which is the principal role of a diode. When forward biased, a silicon diode will conduct but has a voltage drop of around 0.6v so is not useful for rectifying small voltages (unless used as a perfect diode with an op amp).
The IN5408 diode is an ordinary silicon diode. It has a 3 amp forward current rating, and a 1000 volt peak reverse voltage rating.
Its schotlky diode. schotlky diode is metal semi conducter junction. It has fast switchng speed. The cutting voltage of schotlky diode is about 0.2 volts.
Consider ideal diode to be connected in series with resistor of 6kSilicon diode forward bias voltage = 0.7 voltsCurrent across 6k resistor = (5-0.7)/6000 amperesVoltage across {resistor + diode}=4.3 + 0.7=5vIf silicon internal resistance is 6k then voltage across diode=5vIf external resistance is 6k and diode resistance is negligible then voltage across diode=0.7v
A; The 1N4xxx series of rectifier diodes are specified as 1 amp forward conduction. the last number signify the maxi mun reverse voltage it can sustain without breakdown.
0.7 The voltage across a silicon diode when it is forward biased should be greater than or equal (>=) 0.7volts.
forward drop is the same as any other silicon diode, about 0.7V
The nominal forward bias voltage of a silicon diode is 0.7V, depending on current and temperature. If the cathode is 4.5V, the anode should be around 5.2V.
The knee voltage for silicon is approximately 0.7V, while for germanium it is around 0.3V. The knee voltage is the voltage at which a diode starts conducting significantly.
The silicon diode (unless its a Schottky diode) conducts at approximately 0.6 volts. The germanium diode, however, conducts at a much lower voltage, typically 0.2 volts. This means that the germanium diode is better at small signal rectification applications, such as AM radio detectors, allowing a smaller tuner tank circuit.
A silicon diode has a voltage drop of approximately 0.7V, while a germanium diode has a voltage drop of approximately 0.3V. Though germanium diodes are better in the area of forward voltage drop, silicon diodes are cheaper to produce and have higher breakdown voltages and current capabilities.
The current is nearly zero at a voltage less than 0.4v in a forward biased silicon diode because of the small forward-bias voltage.
A germanium diode has a lower forward voltage drop compared to a silicon diode, typically around 0.3V for germanium and 0.7V for silicon. Germanium diodes also have a higher reverse current leakage compared to silicon diodes.
The built is voltage would be lower than silicon diode,more leakage or reverse saturation current,poor thermal stability,high noise and greater conduction in comparison to silicon diodes.
Silicon diodes ARE used in reverse bias. This is the mode in which they do not conduct, which is the principal role of a diode. When forward biased, a silicon diode will conduct but has a voltage drop of around 0.6v so is not useful for rectifying small voltages (unless used as a perfect diode with an op amp).
It is generally accepted to be approximately .7 volts.
The IN5408 diode is an ordinary silicon diode. It has a 3 amp forward current rating, and a 1000 volt peak reverse voltage rating.