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The knee voltage for silicon is approximately 0.7V, while for germanium it is around 0.3V. The knee voltage is the voltage at which a diode starts conducting significantly.

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1y ago

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What is the difference of silicon diode and germanium diode?

A silicon diode has a voltage drop of approximately 0.7V, while a germanium diode has a voltage drop of approximately 0.3V. Though germanium diodes are better in the area of forward voltage drop, silicon diodes are cheaper to produce and have higher breakdown voltages and current capabilities.


Why cut in voltage of silicon is more than that of germanium?

Silicon has a larger band gap energy than germanium, resulting in a higher cut-in voltage for silicon diodes compared to germanium diodes. The larger band gap in silicon means that it requires more energy for electrons to be excited into the conduction band, resulting in a higher cut-in voltage.


Why the knee voltage for germanium is 0.2v?

The knee voltage for germanium is around 0.2V because this is the point at which the diode starts conducting current in a forward bias condition. Below this voltage, the diode remains non-conductive. This specific value is determined by the band gap energy of germanium.


What is the difference between a silicon diode and a germanium diode?

The silicon diode (unless its a Schottky diode) conducts at approximately 0.6 volts. The germanium diode, however, conducts at a much lower voltage, typically 0.2 volts. This means that the germanium diode is better at small signal rectification applications, such as AM radio detectors, allowing a smaller tuner tank circuit.


What parameter in a germanium diode differs from those in a silicon diode?

A germanium diode has a lower forward voltage drop compared to a silicon diode, typically around 0.3V for germanium and 0.7V for silicon. Germanium diodes also have a higher reverse current leakage compared to silicon diodes.

Related Questions

Which type of diode having knee voltage of 0.7V to 0.3V?

Silicon = 0.7v : Germanium = 0.3v


Why the graph of breakdown voltage is cheaper than knee voltage?

Break down voltages happens at low voltages (.6 for silicon & .3 for germanium), whereas knee voltages at higher voltages. That's why its cheaper.


Why the breakdown voltage of silicon is 0.7V whereas for germanium it is 0.3V?

The difference in breakdown voltage between silicon (0.7V) and germanium (0.3V) is mainly due to their different band gap energies. Silicon has a larger band gap compared to germanium, resulting in a higher breakdown voltage. This means that silicon can withstand a higher voltage before breaking down compared to germanium.


Advantages of silicon over germanium?

silicon has a wider bandgap than germenium .silicon jeakage current small, easily available then Ga and break down voltage is more. knee voltage of si is 0.7and Ga is having 0.3then Si is very useful.


What is the difference of silicon diode and germanium diode?

A silicon diode has a voltage drop of approximately 0.7V, while a germanium diode has a voltage drop of approximately 0.3V. Though germanium diodes are better in the area of forward voltage drop, silicon diodes are cheaper to produce and have higher breakdown voltages and current capabilities.


What is the cut in voltage of germanium and silicon diodes?

cut in voltage *** for silicon is 0.7volts and that for germanium is 0.3volts.According to Millman and Taub, "Pulse, Digital and Switching Waveforms", McGraw-Hill 1965, the cutin (or offset, break-point or threshold) voltage for a silicon diode is 0.6, and 0.2 for germanium.Breakdown voltage is another thing entirely. It is the reverse voltage at which the junction will break down.


Why cut in voltage of silicon is more than that of germanium?

Silicon has a larger band gap energy than germanium, resulting in a higher cut-in voltage for silicon diodes compared to germanium diodes. The larger band gap in silicon means that it requires more energy for electrons to be excited into the conduction band, resulting in a higher cut-in voltage.


What is the threshold voltage of silicon and germanium?

In semiconductor uses, such as diodes and transistors, the forward voltage drop for Silicon (Si) is a little less than 0.7 volts, while the FVD for Germanium (Ge) is about 0.3 volts.


Why the knee voltage for germanium is 0.2v?

The knee voltage for germanium is around 0.2V because this is the point at which the diode starts conducting current in a forward bias condition. Below this voltage, the diode remains non-conductive. This specific value is determined by the band gap energy of germanium.


What is the Difference between Si and Ge diodes?

The significant operational difference between a Si diode and a Ge diode is that Si diodes have a knee voltage of 0.7V needed to allow current flow and Ge diodes have an operational voltage of 0.3V to allow current flow.


What is the difference between a silicon diode and a germanium diode?

The silicon diode (unless its a Schottky diode) conducts at approximately 0.6 volts. The germanium diode, however, conducts at a much lower voltage, typically 0.2 volts. This means that the germanium diode is better at small signal rectification applications, such as AM radio detectors, allowing a smaller tuner tank circuit.


What is the value of the knee voltage and breakdown voltage of z?

It is about 0.7 volt for Silicon diodes.