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What is the voltage drop in diode IN4007?
forward drop is the same as any other silicon diode, about 0.7V
Why diode dose not allow to set voltage more than 0.7volts across it?
The barrier potential of the silicon diode is 0.7v if the applied voltage across it is more than this voltage then PN-junction of the diode breaks, once pn-junction breaks the voltage across the diode is constant, since it breaks at 0.7 this voltage will be constant and not exceed for any further increase in applied voltage -inform.mayaprasad@gmail.com The voltage across junction will only exceed from 0.7 volt (for silicon diode) in the case of reverse biasing the applied total voltage will appear across p-n junction. ANSWER: .7 VOLTS is an arbitrarily chosen number since a diode any diode have an exponential curve V vs I . This number is chosen when using a diodes but there are times when a greater or lesser voltage is chosen to reflect the application and the current trough the diode determine that. Example a diode gate diode will be chosen as .6 volts rather then .7v and a heavy conducting rectifier may have .8 volt to reflect closely the true value of the diode drop during real conditions
When a diode is properly forward biased what is the voltage drop across it equal to?
The forward biased voltage drop of a diode depends on the type of diode and the current through the diode. A typical silicon diode will exhibit a voltage drop between 0.6v and 1.4v depending on current. An LED might range from 2v to 3v. A germanium diode might go a low as 0.2v. Bottom line; it varies.
How do you calculate the maximum power dissipated in diode?
The power dissipated by a diode is P = Vf x I watts, where Vf is the forward voltage drop on diode (typically 0.5 volts for silicon diode) and I is the current.
What is more referred to use si diode or a ge diode?
silicon diode is preferred more when compared with germanium diode because in silicon diode the operating voltage is 0.7v where as in germanium diode the operating voltage is 0.3v , germanium is temperature sensitive so it can be easily destroyed by increasing temperature hence silicon diode is preferred more
What is the voltage drop in diode IN4007?
forward drop is the same as any other silicon diode, about 0.7V
What is the difference of silicon diode and germanium diode?
A silicon diode has a voltage drop of approximately 0.7V, while a germanium diode has a voltage drop of approximately 0.3V. Though germanium diodes are better in the area of forward voltage drop, silicon diodes are cheaper to produce and have higher breakdown voltages and current capabilities.
Why diode dose not allow to set voltage more than 0.7volts across it?
The barrier potential of the silicon diode is 0.7v if the applied voltage across it is more than this voltage then PN-junction of the diode breaks, once pn-junction breaks the voltage across the diode is constant, since it breaks at 0.7 this voltage will be constant and not exceed for any further increase in applied voltage -inform.mayaprasad@gmail.com The voltage across junction will only exceed from 0.7 volt (for silicon diode) in the case of reverse biasing the applied total voltage will appear across p-n junction. ANSWER: .7 VOLTS is an arbitrarily chosen number since a diode any diode have an exponential curve V vs I . This number is chosen when using a diodes but there are times when a greater or lesser voltage is chosen to reflect the application and the current trough the diode determine that. Example a diode gate diode will be chosen as .6 volts rather then .7v and a heavy conducting rectifier may have .8 volt to reflect closely the true value of the diode drop during real conditions
Why are silicon diodes not suited for low voltage rectifiers?
Silicon diodes ARE used in reverse bias. This is the mode in which they do not conduct, which is the principal role of a diode. When forward biased, a silicon diode will conduct but has a voltage drop of around 0.6v so is not useful for rectifying small voltages (unless used as a perfect diode with an op amp).
What is the difference between a silicon diode and a germanium diode?
The silicon diode (unless its a Schottky diode) conducts at approximately 0.6 volts. The germanium diode, however, conducts at a much lower voltage, typically 0.2 volts. This means that the germanium diode is better at small signal rectification applications, such as AM radio detectors, allowing a smaller tuner tank circuit.
When a diode is properly forward biased what is the voltage drop across it equal to?
The forward biased voltage drop of a diode depends on the type of diode and the current through the diode. A typical silicon diode will exhibit a voltage drop between 0.6v and 1.4v depending on current. An LED might range from 2v to 3v. A germanium diode might go a low as 0.2v. Bottom line; it varies.
When a diode reduces the input voltage?
When a diode reduces the input voltage, it typically operates in the forward bias condition, allowing current to flow while dropping a specific voltage across it, known as the forward voltage drop (usually around 0.7V for silicon diodes). This voltage drop occurs due to the energy required to overcome the potential barrier of the diode's p-n junction. As a result, the output voltage is lower than the input voltage by this forward voltage drop, effectively regulating the voltage in circuits like rectifiers or clamping applications. In reverse bias, a diode ideally blocks current flow, maintaining the input voltage level until breakdown occurs.
What is meant by 0.3 volts for germanium and 0.7 volts for silicon?
== When we make a semiconductor junction (a p-n junction), the electric fields force charges to shift creating what is called a depletion region. This depletion region forms a potential barrier across the junction. This potential barrier has a voltage associated with it, and that voltage is 0.3 volts (approximately) for germanium semiconductor material, and 0.7 volts (approximately) for silicon semiconductor. The terms we apply to this barrier potential are the built-in voltage (or potential), junction voltage (or potential), and contact potential. Use the link below to check facts and review some other closely related material.
How do you calculate the maximum power dissipated in diode?
The power dissipated by a diode is P = Vf x I watts, where Vf is the forward voltage drop on diode (typically 0.5 volts for silicon diode) and I is the current.
What is a substitute for a germanium diode?
There is no exact substitute for a germanium diode, except another germanium diode. However if the only concern is to get a lower forward voltage drop than that of a silicon diode (0.7V), then a schottky barrier diode may be a suitable replacement as its forward voltage drop (<0.1V) is even lower than that of a germanium diode (0.2V).
What is the effect of diode voltage drop as the output voltage?
The effect of diode voltage drop as the output voltage is that the input voltage will not be totally transferred to the output because power loss in the diode . The output voltage will then be given by: vout=(vin)-(the diode voltage drop).
What parameter in a germanium diode differs from those in a silicon diode?
A germanium diode has a lower forward voltage drop compared to a silicon diode, typically around 0.3V for germanium and 0.7V for silicon. Germanium diodes also have a higher reverse current leakage compared to silicon diodes.
