The current is nearly zero at a voltage less than 0.4v in a forward biased silicon diode because of the small forward-bias voltage.
0.7 The voltage across a silicon diode when it is forward biased should be greater than or equal (>=) 0.7volts.
The nominal forward bias voltage of a silicon diode is 0.7V, depending on current and temperature. If the cathode is 4.5V, the anode should be around 5.2V.
The forward biased voltage drop of a diode depends on the type of diode and the current through the diode. A typical silicon diode will exhibit a voltage drop between 0.6v and 1.4v depending on current. An LED might range from 2v to 3v. A germanium diode might go a low as 0.2v. Bottom line; it varies.
basically a .6v to .7v is required to saturate the transistor The collector to emitter region will begin to become conductive once the base emitter junction is forward biased enough. Depending on the current through the base-emitter junction, the forward voltage drop could be anywhere from around .55 to .8 volts. .6 to .7 volts minimum is a good approximation not taking into account the device characteristics. Bipolar transistors (npn pnp) are current to current devices not voltage to current. This is for silicon transistors, germanium devices are lower forward voltage devices. Around .3 volts.
when a diode is forward biased it conducts current
0.7 The voltage across a silicon diode when it is forward biased should be greater than or equal (>=) 0.7volts.
The nominal forward bias voltage of a silicon diode is 0.7V, depending on current and temperature. If the cathode is 4.5V, the anode should be around 5.2V.
The diode conducts at its forward breakdown voltage. Depending on the current, and the type of diode, the voltage could be anywhere between 0.2 and 3.5 volts, with a nominal silicon range of 0.7 to 1.4.
The forward biased voltage drop of a diode depends on the type of diode and the current through the diode. A typical silicon diode will exhibit a voltage drop between 0.6v and 1.4v depending on current. An LED might range from 2v to 3v. A germanium diode might go a low as 0.2v. Bottom line; it varies.
Zero current flow when reverse biased, zero voltage drop when forward biased.
A; The 1N4xxx series of rectifier diodes are specified as 1 amp forward conduction. the last number signify the maxi mun reverse voltage it can sustain without breakdown.
To be forward biased any diode (e.g. vacuum tube, crystal, junction, point contact) must have its relative anode voltage more positive than its cathode voltage. If the absolute anode voltage is negative but the cathode voltage is even more negative, then the diode will be forward biased. But as your question made no mention at all of the cathode, I cannot tell if this is the case or not.
Cut-in voltage is the value of voltage at which appreciable current begins to flow when a pn junction is forward biased.
DC forward voltage is generally related to diodes. It means the voltage across the diode when the diode is forward biased, i.e. when the anode is more positive than the cathode. The forward voltage is the drop across the diode. The amount of drop is a function of current. For typical silicon diodes, the forward voltage drop ranges from 0.6 volts for very small currents, to 1.5 or more volts for large currents.
basically a .6v to .7v is required to saturate the transistor The collector to emitter region will begin to become conductive once the base emitter junction is forward biased enough. Depending on the current through the base-emitter junction, the forward voltage drop could be anywhere from around .55 to .8 volts. .6 to .7 volts minimum is a good approximation not taking into account the device characteristics. Bipolar transistors (npn pnp) are current to current devices not voltage to current. This is for silicon transistors, germanium devices are lower forward voltage devices. Around .3 volts.
One description would be forward biased.
when a diode is forward biased it conducts current