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No. An ordinary diode, be it silicon or germanium, conducts in one direction only, whereas a zener diode conducts in both directions, but at different voltages. An ordinary diode is used to rectify, using its forward bias characteristics, while a zener diode is used to regulate, using its reverse bias characteristics.
silicon diode is preferred more when compared with germanium diode because in silicon diode the operating voltage is 0.7v where as in germanium diode the operating voltage is 0.3v , germanium is temperature sensitive so it can be easily destroyed by increasing temperature hence silicon diode is preferred more
characteristics if gunn diode
0.7 The voltage across a silicon diode when it is forward biased should be greater than or equal (>=) 0.7volts.
forward drop is the same as any other silicon diode, about 0.7V
SILICON same as any other diode but with different characteristics
Potential barrier of silicon is 0.7, whereas potential barrier of germanium is 0.3
No. An ordinary diode, be it silicon or germanium, conducts in one direction only, whereas a zener diode conducts in both directions, but at different voltages. An ordinary diode is used to rectify, using its forward bias characteristics, while a zener diode is used to regulate, using its reverse bias characteristics.
97f
silicon diode is preferred more when compared with germanium diode because in silicon diode the operating voltage is 0.7v where as in germanium diode the operating voltage is 0.3v , germanium is temperature sensitive so it can be easily destroyed by increasing temperature hence silicon diode is preferred more
characteristics if gunn diode
germenium diode contains majority electron as a charge carriers while the silicon diode contains holes as a majority charge cariers,
A silicon diode is a tiny electronic component having two terminals, usually a switch or limiting device.
A silicon avalanche photo diode is fabricated by the process called impact ionization.
the cut in vol for silicon diode is 0.7 where as germaium is around 0.3 because of their construction( the ratio of majority n minority carreirs)
The built is voltage would be lower than silicon diode,more leakage or reverse saturation current,poor thermal stability,high noise and greater conduction in comparison to silicon diodes.
The entire 1N40xx series of power diodes are all silicon. The OA79 small signal diode is germanium.