A silicon diode is a tiny electronic component having two terminals, usually a switch or limiting device.
A germanium diode has a lower forward voltage drop compared to a silicon diode, typically around 0.3V for germanium and 0.7V for silicon. Germanium diodes also have a higher reverse current leakage compared to silicon diodes.
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A silicon avalanche photo diode is fabricated by the process called impact ionization.
The built is voltage would be lower than silicon diode,more leakage or reverse saturation current,poor thermal stability,high noise and greater conduction in comparison to silicon diodes.
The entire 1N40xx series of power diodes are all silicon. The OA79 small signal diode is germanium.
It is not 'Cutting voltage' but it is Cut-in voltage'. It is the voltage at which the diode turns ON. For silicon it is 0.7v. After reaching 0.7V diode current starts increasing rapidly for little increase in voltage.
the cut in vol for silicon diode is 0.7 where as germaium is around 0.3 because of their construction( the ratio of majority n minority carreirs)
SILICON same as any other diode but with different characteristics
0.7 The voltage across a silicon diode when it is forward biased should be greater than or equal (>=) 0.7volts.
The silicon diode (unless its a Schottky diode) conducts at approximately 0.6 volts. The germanium diode, however, conducts at a much lower voltage, typically 0.2 volts. This means that the germanium diode is better at small signal rectification applications, such as AM radio detectors, allowing a smaller tuner tank circuit.
forward drop is the same as any other silicon diode, about 0.7V
As that of most power devices power diode are maid from silicon material(because of its wide band gap) . but now days alloy of silicon are used like sic(silicon carbide) by ank