A silicon diode is a tiny electronic component having two terminals, usually a switch or limiting device.
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silicon diode is preferred more when compared with germanium diode because in silicon diode the operating voltage is 0.7v where as in germanium diode the operating voltage is 0.3v , germanium is temperature sensitive so it can be easily destroyed by increasing temperature hence silicon diode is preferred more
germenium diode contains majority electron as a charge carriers while the silicon diode contains holes as a majority charge cariers,
our raight
A silicon avalanche photo diode is fabricated by the process called impact ionization.
the cut in vol for silicon diode is 0.7 where as germaium is around 0.3 because of their construction( the ratio of majority n minority carreirs)
The built is voltage would be lower than silicon diode,more leakage or reverse saturation current,poor thermal stability,high noise and greater conduction in comparison to silicon diodes.
The entire 1N40xx series of power diodes are all silicon. The OA79 small signal diode is germanium.
A silicon diode has a voltage drop of approximately 0.7V, while a germanium diode has a voltage drop of approximately 0.3V. Though germanium diodes are better in the area of forward voltage drop, silicon diodes are cheaper to produce and have higher breakdown voltages and current capabilities.
It is not 'Cutting voltage' but it is Cut-in voltage'. It is the voltage at which the diode turns ON. For silicon it is 0.7v. After reaching 0.7V diode current starts increasing rapidly for little increase in voltage.
the cut in vol for silicon diode is 0.7 where as germaium is around 0.3 because of their construction( the ratio of majority n minority carreirs)
SILICON same as any other diode but with different characteristics