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If it's a silicon zener diode, it conducts in the reverse direction after the rated voltage is reached. Otherwise, it only conducts in the forward bias direction.
A silicon diode has a voltage drop of approximately 0.7V, while a germanium diode has a voltage drop of approximately 0.3V. Though germanium diodes are better in the area of forward voltage drop, silicon diodes are cheaper to produce and have higher breakdown voltages and current capabilities.
cut in voltage *** for silicon is 0.7volts and that for germanium is 0.3volts.According to Millman and Taub, "Pulse, Digital and Switching Waveforms", McGraw-Hill 1965, the cutin (or offset, break-point or threshold) voltage for a silicon diode is 0.6, and 0.2 for germanium.Breakdown voltage is another thing entirely. It is the reverse voltage at which the junction will break down.
A; The 1N4xxx series of rectifier diodes are specified as 1 amp forward conduction. the last number signify the maxi mun reverse voltage it can sustain without breakdown.
The built is voltage would be lower than silicon diode,more leakage or reverse saturation current,poor thermal stability,high noise and greater conduction in comparison to silicon diodes.
The IN5408 diode is an ordinary silicon diode. It has a 3 amp forward current rating, and a 1000 volt peak reverse voltage rating.
The knee voltage for silicon is approximately 0.7V, while for germanium it is around 0.3V. The knee voltage is the voltage at which a diode starts conducting significantly.
It is not 'Cutting voltage' but it is Cut-in voltage'. It is the voltage at which the diode turns ON. For silicon it is 0.7v. After reaching 0.7V diode current starts increasing rapidly for little increase in voltage.
Avalanche breakdown in Silicon-Controlled Rectifiers (SCRs) refers to the rapid increase in current flow through the device due to high reverse voltage. This phenomenon occurs when the reverse voltage exceeds the breakdown voltage of the SCR, causing a sudden breakdown of the junction and a rapid increase in current flow. Avalanche breakdown can damage the SCR if not properly controlled.
Silicon diodes ARE used in reverse bias. This is the mode in which they do not conduct, which is the principal role of a diode. When forward biased, a silicon diode will conduct but has a voltage drop of around 0.6v so is not useful for rectifying small voltages (unless used as a perfect diode with an op amp).
The main difference between a 1n4004 and a 1n4007 are in the maximum RMS voltage, the maximum DC blocking voltage and the maximum repetitive peak reverse voltage. These are 280 and 700, 400 and 1000, and 400 and 1000 volts respectively.