Explain the formation of depletion layer in pn junction diode?

Answer 1

hey dear, in p-n junction p-type material has more positive charged called holes and n-side having e-in majority... when we apply negative biasing then negative terminal is connected to p terminal then holes are attracted by negative terminal and e's are attracted by positive terminals.....and minority carries are forced towards junction, then at junction electron and hole pair generation occurs. after this at junction charge is accumulated by attraction and junction is get wider by a small amount that is called as depletion layer...... now you can understand how depletion layer is created..

Answer 2

hii i have a little idea about it

when electrons from n side and holes from p side combines then a layer is formed there that is called depletion layer.

In a p-n , the depletion layer is formed as follows :

with the bound positive charges present in the n-side and bound negative charges present in the p-side of the material, the bound charges in the p-type material repel positive charges while the bound charges in the n-type material repel negative charges and as the intensity builds up, the depletion layer is created.

Answer 3

The region around the junction that is depleted in carriers. It expands on application of reverse bias and contracts on application of forward bias until it vanishes allowing the diode to conduct.

Answer 4

increase in doping increases the width of depletion layer as more and more electron hole combination takes place.