hey dear, in p-n junction p-type material has more positive charged called holes and n-side having e-in majority... when we apply negative biasing then negative terminal is connected to p terminal then holes are attracted by negative terminal and e's are attracted by positive terminals.....and minority carries are forced towards junction, then at junction electron and hole pair generation occurs. after this at junction charge is accumulated by attraction and junction is get wider by a small amount that is called as depletion layer...... now you can understand how depletion layer is created..
hii i have a little idea about it
when electrons from n side and holes from p side combines then a layer is formed there that is called depletion layer.
In a p-n , the depletion layer is formed as follows :
with the bound positive charges present in the n-side and bound negative charges present in the p-side of the material, the bound charges in the p-type material repel positive charges while the bound charges in the n-type material repel negative charges and as the intensity builds up, the depletion layer is created.
The region around the junction that is depleted in carriers. It expands on application of reverse bias and contracts on application of forward bias until it vanishes allowing the diode to conduct.
increase in doping increases the width of depletion layer as more and more electron hole combination takes place.
Difference between Schottky Barrier Diode and P-N Junction Diode is as following...Schottky Diode1) Usually using the aluminum metal which is trivalent element. 2) Depletion layer is thinner than the p-n junction diode.3) Forward threshold voltage is smaller than p-n junction diode(0.1V).4) The junction capacitance is lower than p-n junction diode.P-N Junction Diode1) Trivalent impurity is added to the pure silicon structure. 2) Depletion layer is wider than Schottky diode.3) Forward threshold voltage is higher than Schottky diode(0.6V)4) The junction capacitance is higher than Schottky diode.
Junction diode are made up of pn junction or pn diodes it takes more energy to formation of veet hair removal cream always use veet hair removal cream for better sex
The critical value of the voltage, at which the breakdown of a P-N junction diode occurs is called the breakdown voltage.The breakdown voltage depends on the width of the depletion region, which, in turn, depends on the doping level. The junction offers almost zero resistance at the breakdown point.
zener diode
The difference between the pn-junction diode and the zener diode is that the pn-junction diode is used for rectification while the zener diode is used for rectification and stabilization. Also, the zener diode can function in the breakdown region while the pn-juntion diode can not function in that regime.
Difference between Schottky Barrier Diode and P-N Junction Diode is as following...Schottky Diode1) Usually using the aluminum metal which is trivalent element. 2) Depletion layer is thinner than the p-n junction diode.3) Forward threshold voltage is smaller than p-n junction diode(0.1V).4) The junction capacitance is lower than p-n junction diode.P-N Junction Diode1) Trivalent impurity is added to the pure silicon structure. 2) Depletion layer is wider than Schottky diode.3) Forward threshold voltage is higher than Schottky diode(0.6V)4) The junction capacitance is higher than Schottky diode.
What is the cause of reverse recovery time in a pn junction diode
Junction diode are made up of pn junction or pn diodes it takes more energy to formation of veet hair removal cream always use veet hair removal cream for better sex
they ARE, but only in close proximity (at the junction). this is what creates the depletion region around the junction: electrons being attracted to holes and falling in. once the depletion region gets wide enough attraction stops.
The critical value of the voltage, at which the breakdown of a P-N junction diode occurs is called the breakdown voltage.The breakdown voltage depends on the width of the depletion region, which, in turn, depends on the doping level. The junction offers almost zero resistance at the breakdown point.
As we bring P type and N type semiconductors fused together, then rich holes in P type would get neutralized with some rich electrons in N type. Hence at the juntion region, there will not be charge carriers ie holes and electrons. So it is known as Depletion Region. Depletion means emptying something. In case of ordinary diode this depletion region would be wider where as in case of Zener Diode the depletion region would be narrower. This is because the semiconductors are heavily doped. Hence potential barrier would be easily built up even with a thin region where holes and electrons get combined for neutrelization.
It is one junction i.e. P-N junction diode.
a diode can be make using p-n junction....form a p junction n form a n junction...and after joining them u cn make a p-n junction diode....for making a diode u ll ve to face doping problems
The thickness of the depletion region or depletion layer (and there are other terms) varies as the design of the semiconductor. The layers in a semiconductor are "grown" (usually by deposition), and this can be controlled. The typical depletion region thickness in an "average" junction diode is about a micron, or 10-6 meters. Junction "construction" presents major engineering considerations to those who design and make semiconductors as there are many different kinds. A link is provided to the section on the width of depletion regions in the Wikipedia article on that topic.
When a diode is made (ie. NO current pass through the diode) then depletion layer is form between N & P.
Schottky Diode
diode is unipolar