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In very simple terms, if the voltage output of the device being paralleled is lower than that of the device already on line, then energy will flow back to the device being paralleled. In practise, it can be far rather more complicated than that: for example an alternator connected to the grid can have the same voltage as the grid, but if insufficient torque is applied to its rotor, then energy can flow back to the alternator, causing it to 'motor'.

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Q: What are the causes of reverse power during parallel operation?
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Explain the operation of jfet with any time?

JFET Construction and OperationA schematic representation of an n channel JFET is shown in Figure 118. An n-type channel is formed between two p-type layers which are connected to the gate. Majority carrier electrons flow from the source and exit the drain, forming the drain current. The pn junction is reverse biased during normal operation, and this widens the depletion layers which extend into the n channel only (since the doping of the pregions is much larger than that of the n channel). As the depletion layers widen, the channel narrows, restricting current flow. Figure 118: n-channel JFET structure.When , there is little voltage drop along the length of the channel, and the depletion regions are parallel, Figure 119. As vGS is increased negatively, they eventually touch reducing iD to zero. The value of vGSat which this occurs is called the pinch-off voltage, Vp (or vGS(off)).Figure: n-channel JFET structure for showing parallel depletion regions.When , there is a voltage drop along the length of the channel, and the depletion regions are no longer parallel, but are closer together towards the drain, Figure 120. As vDS is increased, they will touch (pinch-off) towards the drain, and the drain current iD can increase no longer. At the threshold of pinch-off, vGS-vDS=Vp. As vDS is further increased, iD remains constant, and the JFET is in its current saturationregion, the normal mode of operation. (This constant current region is a characteristic feature of any transistor, FET or BJT.) The channel shape remains unchanged, with a small region of touch near the drain, and further increases in vDS occurs across this small region.Figure: n-channel JFET structure for showing non-parallel depletion regions.JFETS are high input impedance devices, and so (due to the reverse bias pn junctions).


Why is the main switch connected in series together with the rest of the circuits in the house?

It is connected so that it can disconnect the entire power grid in the house with one switch. This switch is usually integrated into a circuit breaker. No matter how one looks at it, this switch must be made to withstand (and be able to switch) great currents (in excess of 16A) at relatively high voltages (120V/230V). Special care must be taken during the design phase, as the switch will most likely have to suffer severe arcing as well as heating, during normal operation.


What exactly is a fuse map?

Fuse maps are found inside programmable logic devices. The fuses are selectively blown during programming of the device to cause it to have the desired operation.


What are the advantages and disadvantages of pn junction diode?

A junction diode is very useful serving as a rectifier, a switch, or a voltage reference, in an electronic circuit. Switch/rfectifier: the diode acts like a wire when the applied forward bias is above 0.6 V and like an insulator when the bias is reverse but less than the breakdown voltage. The diodes are ubiquitous in the ESD-protect circuit of an input of an electronic circuit. When the reverse bias is high enough, the diode starts to conduct again. However, the action is rather abrupt, meaning a change in 0.1 V increases the reverse current by orders of magnitude. The diode (reverse) voltage seems to have been pinned, regardless of the current henceforth, hence a voltage reference. Also, the pn junction acts like a poorly-insulated capacitor, normally in the reverse-bias region, but acts a capacitor nonetheless, so the designer has one more option to use. The junction diode can serve as an on-chip thermometer after calibration. The junction reverse current is very sensitive to the junction temperature. One unintentional usage is as an impurity sensor. The ideality factor in the forward-bias region is very sensitive to impurity during the fabrication and after passivation. The fact that the pn junction needs to be charged and discharged to realize the switching function, causes a delay in action. This delay can be undesirable to high-speed operations. In voltage referencing, the diode can be over-stressed during breakdown. The pn junction can be thermally destroyed in an avalanche action. The result is a an unintentional permanent short circuit. Since the diode requires a finite voltage level to turn on, this overhead of 0.5V is a headache to a designer who may be using a power supply of 1.8V or lower. Schottky-barrier diodes are not always available to reduce this overhead.


Can you insulate above an LED downlight?

This information should be in the documentation that came with your light but...Since most of the energy used in an LED is given out as light (as opposed to an incandescent bulb, which uses most of it's energy as heat) it is probably OK to insulate above it. However the transformer pack may still get hot during operation, so for a particular fitting you are better off to check the manufacturers specification before taking any chances.

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