A: The essential difference is while it will behave like a normal diode at some at .6 forward voltage it has a negative impedance area before this point is reached it is not a very stable area to maintain and has the tendency to switch from one mode [low level] to the other .6v and very fast endeed.
In step-graded the acceptor and donor concentrations in the semiconductor are constants up to the junction.In a linearly-graded junction, impurity concentration varies linearly with distance from the junction
A p-n junction (or a metal-semiconductor junction) with rectifying behaviour is an electronic device which allows a one-way only current flow (between the two semiconductor regions, or between the metal and the semiconductor). An ohmic contact in a metal-semiconductor junction is realized by lowering the potential barrier (allowing electrons to easily migrate into the metal) and by increasing the doping levels in the semiconductor (more than 10^18 cm^-3): this way the potential barrier, that should stop electrons from migrating into the semiconductor, is confined in a very small region making it possible for electrons with low energy to pass through it (tunneling effect). This means that in a ohmic contact current can flow both ways; such a device apparently works like a resistor with a low resistance, hence the "ohmic contact" name.
A semiconductor's resistivity decreases with increasing temperature. A metal's resistivity increases with increasing temperature.
voltageCurrent between the two bases of the UJT sets up a voltage gradient in the semiconductor. When the voltage on the emitter of the UJT rises high enough to forward bias the emitter-base junction at the voltage of the interbase gradient where the emitter is located, the UJT "turns on".
The built in potential in a pn junction. Due to the difference in carrier concentration between the sides of a pn junction. Diffusion potential increases with increase in doping levels.
In step-graded the acceptor and donor concentrations in the semiconductor are constants up to the junction.In a linearly-graded junction, impurity concentration varies linearly with distance from the junction
A p-n junction (or a metal-semiconductor junction) with rectifying behaviour is an electronic device which allows a one-way only current flow (between the two semiconductor regions, or between the metal and the semiconductor). An ohmic contact in a metal-semiconductor junction is realized by lowering the potential barrier (allowing electrons to easily migrate into the metal) and by increasing the doping levels in the semiconductor (more than 10^18 cm^-3): this way the potential barrier, that should stop electrons from migrating into the semiconductor, is confined in a very small region making it possible for electrons with low energy to pass through it (tunneling effect). This means that in a ohmic contact current can flow both ways; such a device apparently works like a resistor with a low resistance, hence the "ohmic contact" name.
Metal is a good conductor of electricity due to the presence of free electrons, while semiconductor has conductivity in between metal and insulator and its conductivity can be controlled by doping. Insulator has very low conductivity as it lacks free electrons for conduction.
What is the connection between a metaloid and a semiconductor
It is a semiconductor.
Junction Field Effect Transistors (JFET) have a single junction between the gate and channel, like a diode but they do not operate like diodes! The junction in a JFET must always be kept reverse biased for it to operate, the junction in a diode is usually expected to be forward biased sometimes and reverse biased at other times while operating.Metal Oxide Semiconductor Field Effect Transistors (MOSFET) have no junction between the gate and channel! Instead they have a silicon dioxide insulator layer. Diodes do not have an insulator layer.The feature that makes FETs operate entirely different from diodes is the channel between the source and drain contactson the semiconductor. By varying the potential on the gate of a FET relative to the potential on the channel the channel can be made to "pinch off" or "open up" thus varying its resistance. This can be used to create amplification in the circuit, which cannot be done using a diode.MOSFETs usually are built on a substrate and use a junction that is always reverse biased to prevent the substrate from short circuiting the channel.Note: most integrated circuits use this same reverse biased substrate junction structure to insulate the components of the circuit on the chip from the substrate semiconductor material to prevent it from short circuiting those components. These junctions are parasitic diodes not shown on the schematic of the integrated circuit, as they have no function except as insulation between components.
The difference between central and junction stations are their locations. A junction station is usually close to a junction station while central stations are not.
Yes, that is correct. Semiconductor materials have properties that fall between those of conductors and insulators. They have electrical conductivity higher than insulators but lower than conductors, making them essential for designing electronic devices such as transistors and diodes.
p-type or n-type semiconductor alone is of very limited use in chips -- you can only make a thin-film resistor or parallel-plate capacitor with it. You also need the opposite type, the n-type semiconductor, to make junction diodes and MOS or bipolar transistors, which are essential components in an integrated circuit. ================================
yes
semiconductor is intermediate between conductor and non conductor of electricity
Simple diode is a two-terminal pn-junction with appropriate contacts for connecting the junction to external circuits. Power diode is formed by alloying, diffusion, and epitaxial growth. The modern techniques in semiconductor fabrication processes permit the desired device characteristics. The operation of power diodes is similar to that of signal diodes; but it has larger power-, voltage-, and current-handling capabilities than those of ordinary diodes. Switching speed of the power diodes is low compared to that of signal diodes.