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A p-n junction (or a metal-semiconductor junction) with rectifying behaviour is an electronic device which allows a one-way only current flow (between the two semiconductor regions, or between the metal and the semiconductor). An ohmic contact in a metal-semiconductor junction is realized by lowering the potential barrier (allowing electrons to easily migrate into the metal) and by increasing the doping levels in the semiconductor (more than 10^18 cm^-3): this way the potential barrier, that should stop electrons from migrating into the semiconductor, is confined in a very small region making it possible for electrons with low energy to pass through it (tunneling effect). This means that in a ohmic contact current can flow both ways; such a device apparently works like a resistor with a low resistance, hence the "ohmic contact" name.

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