Doping is the process of adding impurity atoms to intrinsic silicon or germanium to improve the conductivity of the semiconductor. The term impurity is used to describe the doping elements. Two element types are used for doping: trivalent and pentavalent. A trivalent element is one that has three valence electrons A pentavalent element is one that has five valence electrons. When trivalent atoms are added to intrinsic semiconductors, the resulting material is called a p-type material. When pentavalent impurity atoms are used, the resulting material is called an n-type material. The most commonly used doping elements are listed below.
Commonly Used Doping Elements
Trivalent Impurities
To make p-type
Aluminum (Al)
Gallium (Ga)
Boron (B)
Indium (In)
Pentavalent Impurities
To make n-type
Phosphorus (P)
Arsenic (As)
Antimony (Sb)
Bismuth (Bi)
To increase the conductivity of diode
it will increase
pentavalent and trivalent atoms
When pentavalent impurity is added to pure semiconductor, it is known as N-Type semiconductor. In N-type semiconductor electrons are majority carriers where as holes are minority carriers. impurities such as Arsenic, antimony are added. When trivalent impurity is added to pure semiconductor, it is know as P-type semiconductor. In P-type semiconductor holes are majority carriers whereas electrons are minority carriers. Impurities such as indium, galium are added.
Trivalent impurity is used to create a free electron when bonded with a silicon crystal.
To increase the conductivity of diode
it will increase
pentavalent and trivalent atoms
Pentavalent atoms are collectively known as prictogens.Trivalent atoms are collectively known after their simplest member, boron.
Any Pentavalent or Trivalent atom can be added to Silicon to create an "N" type or "P" type Material respectively. Which is used to create a PN Junction. Examples of Pentavalent atoms would be arsenic, antimony, and phosphorus, these Pentavalent atoms would be used to create an "N" Type material. Examples of Trivalent atoms are aluminum, boron, and gallium. Trivalent atom would be used to create "P" type material. I don't know why you would dope germanium, unless your talking about very old technology. Germanium use has slowed to a crawl since the discovery of intrinsic (pure) silicon.
Pentavalent atoms are the one containing 5 electrons in their valence shell while trivalent atoms containg 3 electrons in their valence shell e.g of penta. phosphorus,arsenic e.g of tri. boron, indium.
I would make this guess... in silicon type (IV) a trivalent doping material introduces an energy level just above the valence band, since crudely it is slightly less binding to any local electron. Similarly for a pentavalent doping material the energy level is slightly below the conduction band since is weakly binding. Using that logic a pentavalent dopant would introduce an energy level somewhere in between therefore would not be as useful for a diode/PN-Junction infact they impede the lifetime of holes/electrons in a semiconductor. But I'm no solid state physicist so don't quote me.
A trivalent element is one that can form up to three bonds to other elements. Nitrogen is the most common trivalent non-metal and aluminum is the most common trivalent metal.
Answer An intrinsic semiconductor is a pure semiconductor. An extrinsic semiconductor is doped with trivalent of pentavalent impurities. semiconductors allow only a little amount of electricity to pass through them.they are of two types - n type and p typeAre made of the semiconductor material in its purest from
No. Nitrogen is trivalent as this achieves the octet. heavier members of group 15 are trivalent and pentavalent.
a pure semiconductors with a valency of three doped with a trivalent element is called p-type and a pure semiconductors with a valency of three doped with a pentavalent element is called n-type
The idea is that, depending on the impurities added, the semiconductor will be of one of two different types: * n-type, where the current is conducted by electrons, and * p-type, where the current is conducted by holes.