Doping is the process of adding impurity atoms to intrinsic silicon or germanium to improve the conductivity of the semiconductor. The term impurity is used to describe the doping elements. Two element types are used for doping: trivalent and pentavalent. A trivalent element is one that has three valence electrons A pentavalent element is one that has five valence electrons. When trivalent atoms are added to intrinsic semiconductors, the resulting material is called a p-type material. When pentavalent impurity atoms are used, the resulting material is called an n-type material. The most commonly used doping elements are listed below.
Commonly Used Doping Elements
Trivalent Impurities
To make p-type
Aluminum (Al)
Gallium (Ga)
Boron (B)
Indium (In)
Pentavalent Impurities
To make n-type
Phosphorus (P)
Arsenic (As)
Antimony (Sb)
Bismuth (Bi)
Pantavalent material as it is made up of atoms which have five valence electrons.
It produces n-type extrinsic semiconductor.Ex.-Arsenic(As).
It provides majorty of electrons
To increase the conductivity of diode
it will increase
pentavalent and trivalent atoms
When pentavalent impurity is added to pure semiconductor, it is known as N-Type semiconductor. In N-type semiconductor electrons are majority carriers where as holes are minority carriers. impurities such as Arsenic, antimony are added. When trivalent impurity is added to pure semiconductor, it is know as P-type semiconductor. In P-type semiconductor holes are majority carriers whereas electrons are minority carriers. Impurities such as indium, galium are added.
Trivalent impurity is used to create a free electron when bonded with a silicon crystal.
To increase the conductivity of diode
A p-type semiconductor has an excess of positively charged "holes" in its crystal lattice due to doping with acceptor atoms, while an n-type semiconductor has an excess of negatively charged electrons due to doping with donor atoms. This fundamental difference in charge carriers leads to variations in conductivity and behavior of the two types of semiconductors.
Pentavalent atoms are the one containing 5 electrons in their valence shell while trivalent atoms containg 3 electrons in their valence shell e.g of penta. phosphorus,arsenic e.g of tri. boron, indium.
it will increase
pentavalent and trivalent atoms
No. Nitrogen is trivalent as this achieves the octet. heavier members of group 15 are trivalent and pentavalent.
Pentavalent atoms are collectively known as prictogens.Trivalent atoms are collectively known after their simplest member, boron.
Any Pentavalent or Trivalent atom can be added to Silicon to create an "N" type or "P" type Material respectively. Which is used to create a PN Junction. Examples of Pentavalent atoms would be arsenic, antimony, and phosphorus, these Pentavalent atoms would be used to create an "N" Type material. Examples of Trivalent atoms are aluminum, boron, and gallium. Trivalent atom would be used to create "P" type material. I don't know why you would dope germanium, unless your talking about very old technology. Germanium use has slowed to a crawl since the discovery of intrinsic (pure) silicon.
Well, it is NOT! It is an oxidizing agent because it is itself easily reduced to trivalent bismuth.
A trivalent element is one that can form up to three bonds to other elements. Nitrogen is the most common trivalent non-metal and aluminum is the most common trivalent metal.
Answer An intrinsic semiconductor is a pure semiconductor. An extrinsic semiconductor is doped with trivalent of pentavalent impurities. semiconductors allow only a little amount of electricity to pass through them.they are of two types - n type and p typeAre made of the semiconductor material in its purest from
When pentavalent impurity is added to pure semiconductor, it is known as N-Type semiconductor. In N-type semiconductor electrons are majority carriers where as holes are minority carriers. impurities such as Arsenic, antimony are added. When trivalent impurity is added to pure semiconductor, it is know as P-type semiconductor. In P-type semiconductor holes are majority carriers whereas electrons are minority carriers. Impurities such as indium, galium are added.