in an undoped semiconductor, the number of carrier available per unit volume for conduction is the intrinsic carrier concentration. These are the loosley bonded outermost electrons of the parent atom which can be freed at room temperature hence both type of carrier (n and p) are equally present in the specimen.
if the donor consecration ( nd )is much larger than the intrinsic concentration( ni )then n0=nd when n0 is the thermal equilibrium concentration of free electron so : nopo=ni2 (when p0 is the thermal equilibrium concentration of holes ) po=ni2/nd do some basic math we got nd=ni2/po
Intrinsic
intrinsic impedance is ratio of E/H from a uniform plane ve in a materal
due to the poor conduction at room temperature,the intrinsic semiconductor as such,is not useful in the electronic devices.hence,the current conduction capability of the intrinsic semi conductor should be increased. this can be achieved by adding a small amount of impurity to the intrinsic semi conductor
creativity
at higher values of temperature the intrinsic carrier concentration become comparable to or greater than doping concentration in extrinsic semiconductors. thus majority and minority carrier concentration increases with increase in temperature and it behaves like intrinsic semiconductor.
The formula for calculating the intrinsic carrier concentration in a semiconductor material is given by ni sqrt(Nc Nv exp(-Eg / (2 k T))), where ni is the intrinsic carrier concentration, Nc is the effective density of states in the conduction band, Nv is the effective density of states in the valence band, Eg is the band gap energy, k is the Boltzmann constant, and T is the temperature in Kelvin.
Hole concentration can be calculated using the formula: p = n_i^2 / n where p is the concentration of holes, n_i is the intrinsic carrier concentration, and n is the concentration of electrons. This formula takes into account the charge balance in a semiconductor material.
The formula to calculate hole density in an N-Type semiconductor is (p = \frac{{n_i^2}}{{n}}), where (p) is the hole density, (n_i) is the intrinsic carrier concentration, and (n) is the electron density. This formula is derived from the law of mass action and represents the equilibrium condition where the product of electron and hole concentrations equals the square of the intrinsic carrier concentration in a semiconductor material.
Intrinsic - A perfect semiconductor (ex: silicon) crystal with no impurities or lattice defects is called an intrinsic semiconductorExtrinsic - an extrinsic material is achieved by introducing impurities into the intrinsic material described above, such as doping silicon with boron atoms, such that the equilibrium carrier concentrations are different from the intrinsic carrier concentration.
if the donor consecration ( nd )is much larger than the intrinsic concentration( ni )then n0=nd when n0 is the thermal equilibrium concentration of free electron so : nopo=ni2 (when p0 is the thermal equilibrium concentration of holes ) po=ni2/nd do some basic math we got nd=ni2/po
Intrinsic
Germanium has a smaller bandgap compared to silicon, leading to higher intrinsic carrier concentration and hence greater leakage current. Additionally, germanium has a higher intrinsic carrier mobility, which can further contribute to increased leakage current compared to silicon.
I believe that is an intrinsic property.
Intrinsic(inherent,or inborn)evil.
Extrinsic is external; intrinsic is internal.
Being intrinsic is to be the essential thing that makes that something what it is. An example sentence would be: His personality is intrinsic.