low power schottky
Walter H. Schottky then James Robert Baird US Patent 3463975
Set analogue multimeter to x 10 k ohm. Place the red probe to the cathode and the black probe to anode and you will get a low ohm reading. Now, reverse the probe and you will get some leakage reading. That leaking reading is what tells you this is a Schottky Barrier Diode.
A schottky diode has non ideal properties. Among them is a capacitance (e. g. 900pF), which delays switching in case of a polarity reversal.
Schottky
Low-power Schottky
In the context of "74HC245", "HC" stands for High-Speed CMOS (Complementary Metal-Oxide-Semiconductor). This indicates that the 74HC245 is a type of CMOS integrated circuit that operates at a high speed.
(Low-power)-(Schottky)
low power schottky
74LS02 is a low power schottky, which is a type of i.c. chip.
74245 is a tri state buffer.LS stands for Low-power Schottky
The 74LS32 is a Quad Two Input OR gate with Low Power Schottky specifications.
74245 is a tri state buffer.LS stands for Low-power Schottky
Schottky was the physicist who predicted the Schottky effect. The effect was first exploited in the electron guns that were used much the most often in the old television tubes. Schottky predicted that electrons would find it easier to 'escape' the negatively charged cathode of one of these tubes. A Schottky solid-state diode exploits this effect at a metal to semiconductor junction. In contrast a semiconductor to semiconductor junction involves minority carriers as well, which tend to collect at the junction. Because no charge collects at the junction of the Schottky device it tends to be faster. However, it uses more power. Low power Schottky devices were developed to show greater resistance to the circuit to reduce their power consumptions. Subsequent higher resistance (and lower power) devices have since been developed. Please see the link.
The meaning of Low Power Objective is itprovides the least magnification 4X.
§ Low-power TTL (L), which traded switching speed (33ns) for a reduction in power consumption (1 mW) (now essentially replaced by CMOS logic)§ High-speed TTL (H), with faster switching than standard TTL (6ns) but significantly higher power dissipation (22 mW)§ Schottky TTL (S), introduced in 1969, which used Schottky diode clamps at gate inputs to prevent charge storage and improve switching time. These gates operated more quickly (3ns) but had higher power dissipation (19 mW)§ Low-power Schottky TTL (LS)- used the higher resistance values of low-power TTL and the Schottky diodes to provide a good combination of speed (9.5ns) and reduced power consumption (2 mW), and PDP of about 20 pJ. Probably the most common type of TTL, these were used as glue logic in microcomputers, essentially replacing the former H, L, and S sub-families.§ Fast (F) and Advanced-Schottky (AS) variants of LS from Fairchild and TI, respectively, circa 1985, with "Miller-killer" circuits to speed up the low-to-high transition. These families achieved PDPs of 10 pJ and 4 pJ, respectively, the lowest of all the TTL families.§ Low-voltage TTL (LVTTL) for 3.3-volt power supplies and memory interfacing.
Schottky diodes are often used for RF radio frequency applications as a mixer or detector diode. Another common application for the Schottky diode is in power applications as a rectifier.