n-type and p type has net no charge because the number of proton and electron remain same in a crystal.
(shahbaz)
The mobility of N type charge current carriers is more than two times greater than the mobility of P type charge carriers . Resulting in faster transistor operating speed .
because in n-type there is a real movement of a free negative charge(electrones not positive holes)
N-type semiconductors are a type of extrinsic semiconductor where the dopant atoms (donors) are capable of providing extra conduction electrons to the host material (e.g. phosphorusin silicon). This creates an excess of negative (n-type) electron charge carriers.
when a semiconductor is doped with p-type and n-type impurities, a pn junction is formed which acts as a diode and prevents the charge carriers to flow to either side of junctionpn juction diode is a semiconductor device that allows current to flow only to one direction.
The depletion region is also called as the space charge region.A p-n junction diode is formed by placing p and n type semiconductor materials in intimate contact on an atomic scale. This may be achieved by diffusing acceptor impurities into an n type silicon crystal or by the opposite sequence.In an open circuit p-n junction diode, majority carriers from either side will diffuse across the junction to the opposite side where they are in minority. These diffusing carriers will leave behind a region of ionized atoms at the immediate vicinity of the metallurgical junction. This region of immobile ionized atoms is called the space charge region.
No. The "n" and "p" does not refer to the negative or positive charge, but to the fact that there are atoms that can easily "donate" electrons (n-type), or atoms that can easily "accept" electrons (p-type).
The net charge on n-type and p-type meterials is zero because the r formed by the combination of diferent chemists...
first of all un-doped semi-conductor is said to be intrinsic semi-conductor so, there is no discussion of either N-type or P-type
An atom is composed of proton (p+) with a charge of +1, neutrons, and electrons (e-) of -1. The net charge of the object is thus sum of the p+ and e-. Net charge can be negative, neutral or positive.
The mobility of N type charge current carriers is more than two times greater than the mobility of P type charge carriers . Resulting in faster transistor operating speed .
because in n-type there is a real movement of a free negative charge(electrones not positive holes)
how can i make p type n type material
zero. The net of a positive (p+) charge and a negative (e-) is zero (neutral).
There is no net charge on either substance. However, an N type substrate contains atoms (such as arsenic or phosphorous) trapped in its lattice that have an electron (called a donor electron) in the outer (valence) band of electrons, which can be easily removed by a relatively weak electromotive force (voltage). A P type substrate, although electrically neutral, contains an element (such as boron) which has one fewer electrons in its valence band that it would like to have, making it an acceptor. The missing electron is often called a "hole". To elaborate slightly, bands of electrons like to have a certain number of electrons to be "stable". A donor atom may have one, or perhaps five, electrons in its valence band, while an acceptor might have three or seven. Both would be happier with zero or four or eight. When an N and a P type substance are in contact, a negative voltage on the N material with respect to the P material will allow electrons to move from the donor material to the vacant holes in the acceptor. If the voltage is applied in reverse, the negative charge on the P material attracts the holes away from the junction, and the (relatively) positive charge on the N material attracts electrons away from the junction, and very little current flows.
N-type semiconductors are a type of extrinsic semiconductor where the dopant atoms (donors) are capable of providing extra conduction electrons to the host material (e.g. phosphorusin silicon). This creates an excess of negative (n-type) electron charge carriers.
n-p-n
in correct sense it is not the layer but the region around the metallurgical junction which is depleted of charge carriers .in this region an internal electric field exist which counter balance the diffusion of electron and hole around the junction . basically the main reason for the formation of depletion region is the concentration gradient across metallurgical junction of p-n semiconductor.