answersLogoWhite

0

Crystal diode for a p-type semiconductor and n-type semiconductor formation of the pn junction, in its interface on both sides of a space-charge layer, and has a self-built electric field. When there is no applied voltage, as pn junction on both sides of carrier concentration caused by the proliferation of poor self-built electric current and drift arising from the current equivalent and the balance of power in the state.

When the outside world a positive bias voltage, electric and outside the field of mutual self-suppression role of the Consumers carrier increase from the current spread of the forward current.

When the outside world a reverse bias voltage, external electric field and to further strengthen self-built electric field, in a certain form of reverse voltage and reverse bias voltage value unrelated to reverse saturated current I0.

When the reverse voltage applied to a certain high level, pn junction in the space charge of the electric field strength to achieve the critical values of the double-carrier process, a large amount of electronic hole right, had a great numerical breakdown of the reverse current, Breakdown phenomenon known as diodes.

User Avatar

Wiki User

16y ago

What else can I help you with?