0.6-0.7 V for Si at room temp. and 0.3 for Ge at room temp.
the energy required to break covalent bond in si is 1.1ev and in ge is 0.7ev
The significant operational difference between a Si diode and a Ge diode is that Si diodes have a knee voltage of 0.7V needed to allow current flow and Ge diodes have an operational voltage of 0.3V to allow current flow.
Ge
for germanium it is 0.3 and for silicon it is 0.7
Si can be fabricated into ICs inexpensively, Ge cannot.Si maximum junction operating temperature is 150C, Ge is only 70C.Si is as cheap and plentiful as sand, Ge is more expensive and rarer.etc.
the energy required to break covalent bond in si is 1.1ev and in ge is 0.7ev
silicon diodes Cut in voltage is 0.7 V.but the Germanium cut in voltage is 0.3 V that's why .............
Rd= Vt*c/I Vt=KT/q, K=Boltzmann constant C= constant 2 for si 1 for Ge I current through the diode
For Si it is 0.6or 0.7 and for Ge 0.3 or 0.2.Both values correct for both si and ge
The significant operational difference between a Si diode and a Ge diode is that Si diodes have a knee voltage of 0.7V needed to allow current flow and Ge diodes have an operational voltage of 0.3V to allow current flow.
Ge
Silicon (Si) diodes are more commonly used than germanium (Ge) diodes. Silicon diodes are preferred for most applications due to their higher temperature tolerance, lower leakage current, and greater availability. They are commonly used in rectifiers, signal processing, and various electronic circuits. Germanium diodes, while having some advantages in specific applications (such as lower forward voltage drop), are less common in modern electronics.
Ge has higher conductivity than Si. Because at room temperature the electron and hole mobility for Ge is larger than those of Si. Another explanation is the lower band gap of Ge than Si.
for germanium it is 0.3 and for silicon it is 0.7
格雷格(ge lei si )or 格瑞格(ge rui si)
Ge (Germanium) and Si (Silicon) are both from group 14 in the periodic table. They are in the same group but not in the same period. Ge is in period 4, while Si is in period 3.
Si ge 32A he yi ge xiang jiao shao nian - 1996 is rated/received certificates of: Hong Kong:IIB