silicon diodes Cut in voltage is 0.7 V.but the Germanium cut in voltage is 0.3 V that's why .............
Ge has higher conductivity than Si. Because at room temperature the electron and hole mobility for Ge is larger than those of Si. Another explanation is the lower band gap of Ge than Si.
Silicon (Si) diodes are more commonly used than germanium (Ge) diodes. Silicon diodes are preferred for most applications due to their higher temperature tolerance, lower leakage current, and greater availability. They are commonly used in rectifiers, signal processing, and various electronic circuits. Germanium diodes, while having some advantages in specific applications (such as lower forward voltage drop), are less common in modern electronics.
direct band gap-semiconductor in which the bottom of the conduction band and the top of the valence band occur at the momentum k=0;in the case of d.b.s. energy released during band-to-band electron recombination with a hole is converted primarily into radiation (radiant recombination); wavelength of emitted radiation is determined by the energy gap of semiconductor; examples of d.b.s. GaAs, InP, ZnS, ZnSs, CdS, CdSe etc. indirect bandgap semiconductor --semiconductor in which bottom of the conduction band does not occur at effective momentum k=0, i.e. is shifted with respect to the top of the valence band which occurs at k=0; energy released during electron recombination with a hole is converted primarily into phonon; e.g. Si, Ge, GaP, GaAsp ,Ge etc, .
Ge and si are not used for Making led's because these two emitts less amount in form of light and larger amount in form of heat.
Cutoff voltage is the point at which the battery is fully discharged. This is usually the point at which the device will shut itself off.
the energy required to break covalent bond in si is 1.1ev and in ge is 0.7ev
Ge has higher conductivity than Si. Because at room temperature the electron and hole mobility for Ge is larger than those of Si. Another explanation is the lower band gap of Ge than Si.
silicon is the most commonly used semiconductor. As it is abundant and inexpensive. However, it also has the advantage of a great oxide layer (silicon dioxide) which serves as as dielectric in many applications, and as a result it is relatively easy to make devices out of Si. It's this oxide layer that makes silicon more common than germanium, which does not readily form an oxide layer because Ge has less affinity with oxygen when compared to Si, even though the there are many charge carriers in Ge as compared to Si its the ability to form the oxide layer which makes Si more preferable than Ge
Silicon (Si) diodes are more commonly used than germanium (Ge) diodes. Silicon diodes are preferred for most applications due to their higher temperature tolerance, lower leakage current, and greater availability. They are commonly used in rectifiers, signal processing, and various electronic circuits. Germanium diodes, while having some advantages in specific applications (such as lower forward voltage drop), are less common in modern electronics.
The 32nd element on the periodic table is Germanium (Ge). It is a metalloid with properties that make it useful in semiconductor applications.
0.6-0.7 V for Si at room temp. and 0.3 for Ge at room temp.
To determine the energy band gap of a semiconductor diode, you can plot the natural log of the saturation current against the inverse of temperature. By analyzing the slope of this plot using the equation for diode current and adjusting for temperature effects, you can calculate the energy band gap. This method is based on the relationship between current density and temperature in semiconductor devices.
they are metalloids
Sure, here is a concise table of common semiconductor elements: Silicon (Si): Widely used in electronic devices due to its abundance and semiconductor properties. Germanium (Ge): Another commonly used semiconductor with properties similar to silicon. Gallium (Ga): Used in specialized devices like LEDs and solar cells. Indium (In): Often used in combination with gallium to create indium gallium arsenide (InGaAs) for high-speed electronics. Arsenic (As): Combined with other elements to create semiconductor materials like gallium arsenide (GaAs) for high-frequency applications.
Reverse saturation current of germanium diodeThe current that exists under reverse bias conditions is called the reverse saturation current. Reverse saturation current of the germanium diode is typically 1 micro ampere or 10-6 a.At a fixed temperature, the reverse saturation current of a diode increases with increase in applied reverse bias. In reverse bias region the reverse saturation current also varies with the temperature.
Ge and Si have a valence shell with 4 electronics making them the starting point for semi-conductors. When mixed with atoms that have 3 or 5 electrons in the valence shell (AKA tri-valent and penta-valent) the blending or doping creates P-type and N-type materials - the building blocks for semi-conductors
The GSA (General Semiconductor Association) and GSG (General Semiconductor Group) fuses from GE differ primarily in their design and application specifications. GSA fuses are typically used for general-purpose applications, offering higher interrupting ratings and broader voltage ratings. In contrast, GSG fuses are designed for specific industrial applications, focusing on enhanced performance in circuits with higher inrush currents. Each type is optimized for particular operational environments and safety standards.