This is copied from a similar question to yours fyi.
Using boron, phosphorus, and silicon as examples.
P-type doping is a process where a silicon atom in the lattice is replaced by a boron atom. A Boron atom has 3 electrons in the outer shell, compared with an electron occupancy of 4 for a silicon atom. So a Boron atom provides a vacancy for any free electrons to occupy with a little effort, when an electron chances to be nearby (the four boron-silicon covalent bonds needs 8 electrons to be stable, but only 7 are provided). The net charge of the material is still zero. More about from where the free electron is coming.
N-type doping is using a phosphorus atom to replace a silicon atom. A phosphorus atom has 5 electrons in the outer shell. So a phosphorus atom provides an electron that can be freed with a little effort (the four phosphorus-silicon covalent bonds only need 8 electrons to be stable, each atom needing only to contribute four electrons; the 9th electron will be loosely bound). The net charge of the material is still zero. Where can the electron go?
Magic happens when p-type silicon is brought in contact with n-type silicon to form a pn junction. The excess electron vacancies (holes) in p-Si now can exchange with the excess electrons in n-Si, but the net charge of the p-n silicon entity is still zero. However, microscopically, a depletion region is formed at the pn junction, where excess carriers can cross over to the other side. In the p-Si, excess electrons from the n-Si start filling up the holes (the lack of the 8th outer-shell electron to form the four stable boron-silicon covalent bonds) and negatively-charged boron atoms are formed. In the n-Si, excess holes from the p-Si start swallowing up the loosely-bound electrons (the 9th electron in the outer shell) of phosphorus atoms and positively-charged phosphorus atoms are formed. Once formed, and in the absence of an electric field, the depletion region now presents an energy barrier to any further carrier movement and a steady state results -- no net current in the pn junction.
It is called as DOPING. Doping is the process in which you add an impurity to a pure semiconductor to increase its conductivity. While doping is done, crystal structure of semiconductor is not disturbed.
because they change a materiel's property from it original form (pure form), to a different property from due to doping fig of semiconductor distrot
Semiconductor in pure form (i.e. without doping) is called intrinsic or i-type semiconductor. The no of charge carrier in this case is determined by the materials itself only and not by the impurities. In an intrinsic semiconductor number of excited free electron is equal to the number of holes.
doping is done to increase the no. of holes in a semi conductor or to increase the no. of electron in order to conduct high amount of electricity , further info u can easily get from any 12th std. book.
at higher values of temperature the intrinsic carrier concentration become comparable to or greater than doping concentration in extrinsic semiconductors. thus majority and minority carrier concentration increases with increase in temperature and it behaves like intrinsic semiconductor.
Doping a semiconductor means to introduce impurities to the semiconductor in order to alter it. For the most part, doping a semiconductor increases its conductivity.
It is called as DOPING. Doping is the process in which you add an impurity to a pure semiconductor to increase its conductivity. While doping is done, crystal structure of semiconductor is not disturbed.
because they change a materiel's property from it original form (pure form), to a different property from due to doping fig of semiconductor distrot
Doping is a process of adding some impurity in pure material or pure semiconductor.
Yes
it is metal.. so not used for doping.
electrons or holes depending on doping, as in any semiconductor.
Doping is the intentional introduction of impurities into a semiconductor material to alter its electrical properties. This process can change the conductivity of the material, allowing it to be used in the production of electronic devices such as transistors and diodes. Different types of doping, such as n-type (donor) and p-type (acceptor) doping, can create regions of positive or negative charge within the material.
The process of adding impurities to a semiconductor is called doping. It involves intentionally introducing specific atoms of different elements into the semiconductor crystal lattice to alter its electrical properties. This process can either create an excess of electrons (n-type doping) or holes (p-type doping) in the semiconductor material.
Doping is the term used to describe the process of adding atoms of other elements to a semiconductor to alter its electrical properties by rearranging the electrons.
Impurity
Very. Doping determines the conductivity, pure silicon is a good insulator.