BJT is a current controlled device because its output current is dependent upon the current in the base while for FET it is controlled by the voltage at the gate terminal of the transistor. BJT is a current controlled device because its base current is not zero while for a FET the gate current is zero
IC (collector current) and IB (base current) are related in a bipolar junction transistor (BJT) through the transistor's current gain, denoted as β (beta). The relationship can be expressed as IC = β * IB, meaning that the collector current is a multiple of the base current, where β typically ranges from 20 to 1000 for most BJTs. This relationship highlights the transistor's ability to amplify current, making it a crucial component in electronic circuits.
In a bipolar junction transistor (BJT), the collector current (Ic) is always the largest of the three currents, which include the base current (Ib) and the emitter current (Ie). This is because the collector current is primarily influenced by the amplified current from the base, while the emitter current is the sum of the base and collector currents (Ie = Ib + Ic). In field-effect transistors (FETs), the drain current (Id) is typically the largest. Overall, in both types of transistors, the current flowing through the collector or drain is generally larger than that through the base or source.
BJT is Bipolar junction transistor FET is Field effect Transistor It is a current controlled device It is voltage controlled device
Actually the current gain is equal to Beta+1, not Beta. The current from/into the emitter is the sum of the current into/from the collector and base. Of course this assumes linear operation.For a proof: Ie + Ib + Ic = 0Ic = Beta * IbIe + Ib + Beta * Ib = 0Ie + (Beta + 1) * Ib = 0Ie = -(Beta + 1) * Ib
Because the operation of the transistor is determined by the current at the base. the principle equations of BJT operation are: Ic = h*Ib ,and Ie=Ib+Ic thus device operation is controlled by the input current.
BJT is a current controlled device because its output current is dependent upon the current in the base while for FET it is controlled by the voltage at the gate terminal of the transistor. BJT is a current controlled device because its base current is not zero while for a FET the gate current is zero
IC (collector current) and IB (base current) are related in a bipolar junction transistor (BJT) through the transistor's current gain, denoted as β (beta). The relationship can be expressed as IC = β * IB, meaning that the collector current is a multiple of the base current, where β typically ranges from 20 to 1000 for most BJTs. This relationship highlights the transistor's ability to amplify current, making it a crucial component in electronic circuits.
Bipolar junction transistor(BJT)
In a bipolar junction transistor (BJT), the collector current (Ic) is always the largest of the three currents, which include the base current (Ib) and the emitter current (Ie). This is because the collector current is primarily influenced by the amplified current from the base, while the emitter current is the sum of the base and collector currents (Ie = Ib + Ic). In field-effect transistors (FETs), the drain current (Id) is typically the largest. Overall, in both types of transistors, the current flowing through the collector or drain is generally larger than that through the base or source.
BJT is Bipolar junction transistor FET is Field effect Transistor It is a current controlled device It is voltage controlled device
Emitter current can be summed up by the formula: IE = IC+ IB Where IE = Emitter Current, IC = Collector Current, and IB = Base Current So simply take IE - IC and you'll get an IB of about 100uA. (5mA-4mA = .1mA or 100uA) Also, remember that IB controls IC and IE, not the other way around. You can also determine IB if Beta is known by the formula: IC = IB * Beta Which can be manipulated to equal IB = IC/Beta Hope this was helpful.
Actually the current gain is equal to Beta+1, not Beta. The current from/into the emitter is the sum of the current into/from the collector and base. Of course this assumes linear operation.For a proof: Ie + Ib + Ic = 0Ic = Beta * IbIe + Ib + Beta * Ib = 0Ie + (Beta + 1) * Ib = 0Ie = -(Beta + 1) * Ib
start at Ic'= Ic1+Ic2 Ib'=Ib1 Ic1=B1*Ib' Ie1=Ib2=Ib'(B1+1)=Ib'B1 + Ib' Ic' = Ib'*B1 + Ic2 Ic2= B2(Ib'B1+Ib') Ic' = Ib'B1 + Ib'B1B2 + Ib'B2 divide by Ib' Ic'/Ib'= current gain =B'=B1+B2+B1B2 note: calculations without resistance
BJT stands for bipolar junction transistor because it is composed of two types of semiconductors (P and N-type) rather than just one type like a unipolar transistor. This allows for both electron and hole current flow in the device, giving it its bipolar characteristic.
BJT is a example for current controll device. And JFET is a voltage controlled device.
In electrical terminology, "BC" typically stands for "Base Current." It refers to the current flowing into the base terminal of a bipolar junction transistor (BJT), which is essential for controlling the transistor's operation. The base current plays a crucial role in determining the transistor's current gain and overall performance in amplifying or switching applications.