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Why FET called current controlled device?
BJT is a current controlled device because its output current is dependent upon the current in the base while for FET it is controlled by the voltage at the gate terminal of the transistor. BJT is a current controlled device because its base current is not zero while for a FET the gate current is zero
What condition does a bjt power experience forced current gain?
A bipolar junction transistor (BJT) experiences forced current gain when it operates in the active region, particularly under conditions of high base current. In this region, the transistor can amplify the input current, allowing a small base current to control a much larger collector current. This condition is essential for applications such as amplification and switching in electronic circuits. The forced current gain is typically represented by the current gain factor (β or h_FE) of the BJT.
When the forward saturation in Bipolar junction transistor occurs?
Forward saturation in a BJT occurs when the ratio of collecter-emitter current and base-emitter current reaches hFe or dc beta. A that point, the BJT is no longer operating in linear mode.
Difference between bjt and ujt?
UJT is the voltage controlled device.in which only one mejority carriers are responsible for current flowing. UJT is one junction transistor and it is three terminal emitter and two base. BJT is the current controlled device. in which both mejority and minority carrier are responsiblefor current flowing. this type of transistor consists of two junction and three terminal these are : emitter , base , collector.
Minimum proper base emitter voltage at any instant?
The base-emitter voltage of a BJT is dependent on temperature and current. The minimum voltage ranges from 0.6V to 0.7V. Anything less, and the transistor goes into cutoff. As far as "proper voltage" is concerned, it is more correct to say "proper current", because that is the basis for the BJT - it is a current amplifier, not a voltage amplifier. The proper current depends on the particular biasing design of the circuit at hand.
Why FET called current controlled device?
BJT is a current controlled device because its output current is dependent upon the current in the base while for FET it is controlled by the voltage at the gate terminal of the transistor. BJT is a current controlled device because its base current is not zero while for a FET the gate current is zero
Why bjt is called current controlled current device?
Because the operation of the transistor is determined by the current at the base. the principle equations of BJT operation are: Ic = h*Ib ,and Ie=Ib+Ic thus device operation is controlled by the input current.
What does BC in electrical language mean?
In electrical terminology, "BC" typically stands for "Base Current." It refers to the current flowing into the base terminal of a bipolar junction transistor (BJT), which is essential for controlling the transistor's operation. The base current plays a crucial role in determining the transistor's current gain and overall performance in amplifying or switching applications.
What condition does a bjt power experience forced current gain?
A bipolar junction transistor (BJT) experiences forced current gain when it operates in the active region, particularly under conditions of high base current. In this region, the transistor can amplify the input current, allowing a small base current to control a much larger collector current. This condition is essential for applications such as amplification and switching in electronic circuits. The forced current gain is typically represented by the current gain factor (β or h_FE) of the BJT.
Why is transistor called a current controlled device?
for a BJT to amplify we give input signalif suppose we use BJT in CE configuration input is given at Emitter-Base junction and output is taken at Collector base junctionthe input voltage increases or decreases the forward bias of the E-B junction affecting a change in the base current and we know that collector current is a function of base current collector current also variesso by selectively changing the base current we can effectively change the collector current
When the forward saturation in Bipolar junction transistor occurs?
Forward saturation in a BJT occurs when the ratio of collecter-emitter current and base-emitter current reaches hFe or dc beta. A that point, the BJT is no longer operating in linear mode.
Why a bjt is called a current control device?
The collector current is a multiple of the base current due to the inherent design of the BJT. In circuit analysis, barring knowing the exact amplification, I've used 50 many times - so if you have 20 uA flowing in the base, the collector current should be ~ 1mA, and the emmiter will be ~1.02mA.
What are the example current controlled device?
Bipolar junction transistor(BJT)
Why it is named as self Bias of BJT?
The Self Bias of the BJT is also called the voltage divider bias. It is called thus because it can stabilize the collector current, the base emitter voltage and the amplification factor.
Difference between bjt and ujt?
UJT is the voltage controlled device.in which only one mejority carriers are responsible for current flowing. UJT is one junction transistor and it is three terminal emitter and two base. BJT is the current controlled device. in which both mejority and minority carrier are responsiblefor current flowing. this type of transistor consists of two junction and three terminal these are : emitter , base , collector.
What is the difference between jfet and bjt?
FET's (field effect transistors) are unipolar devices because unlike BJT's that use both electron and hole current, they operate only with one type of charge carrier. BJT is a current-controlled device; that is the base current controls the amount of collector current. FET is a voltage-controlled device, where voltave between two of the terminals (gate and source) controls the current through the device. BJT's have a low input impedance ( ~1k -3k ohms), while FET's have a very high input impedance (~10^11 ohms). Consequently FET's have a lower power consumption. BJT's produce more noise than FET's . FET's have a slower switching speed . BJT's are subject to thermal runway while FET's are immune to this problem. BJT's have a higher cutoff frequencey and a higher maximum current then FET's. FET's are easy to fabricate in large scale and have higher element density the BJT's.
Minimum proper base emitter voltage at any instant?
The base-emitter voltage of a BJT is dependent on temperature and current. The minimum voltage ranges from 0.6V to 0.7V. Anything less, and the transistor goes into cutoff. As far as "proper voltage" is concerned, it is more correct to say "proper current", because that is the basis for the BJT - it is a current amplifier, not a voltage amplifier. The proper current depends on the particular biasing design of the circuit at hand.
