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The collector current is a multiple of the base current due to the inherent design of the BJT. In circuit analysis, barring knowing the exact amplification, I've used 50 many times - so if you have 20 uA flowing in the base, the collector current should be ~ 1mA, and the emmiter will be ~1.02mA.
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∙ 14y ago
Wiki User
∙ 11y agobecause charge carriers are electrons
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What is the main advantage of an fet transistor over a bjt transistor?
BJT & FET parameters are temperature dependent. In BJT the collector junction resistance decreasing ( collector current increasing) with temperature raise.Due to the highe temperature & current transistor will damage quickly. In FET drain resistance increasing (drain current decreasing ) with increasing temperature.Due to this property it will not damage easily. We can say from the above two statements FET is more temperature stable.FET can use in highe temperature applications.
How do you calculate the current gain of a transistor?
Bipolar transistor current gain is also called "Beta," or the h-parameter "hfe." beta = current_out / current_in The beta of a BJT is mostly determined by the thickness of the Base region, and by the excess doping in the Emitter relative to the Base. A thin Base and a heavily-doped Emitter leads to a high value for current gain. In a BJT, beta = Ic / Ib In a FET, beta is usually taken as infinity, since no current flows in or out of the gate. Beta is an impirical number. It means nothing unless the Ic is known or the load. It can have a beta from 1000 to 10 it all depends on the load.
Difference between jfet and mosfet?
hi Main differences are, Bipolar Junction Transistor: switching speed is low;switching loss is more; conduction loss is less; frequency of switching is less we can use as amplifier;Current control; conduction due to electron & holes Junction field Effect Transistor: it an unipolar; switching speed is high;so loss is less voltage control; Metal oxide semiconductor fet: it nothiug bt fet, most of time v used for switching device in Smps do to power range A BJT is a bipolar transistor in the sense that there are two types of charge carriers in them. In npn trnsistor the primary carrier in the hole and in pnp the electron. In JFET there is only one type of carrier. In n-channel case the carrier is elctron and in p-channel hole. So JFET is unipolar in that sense. BJT is a current controlled device as the input current is amplified subjected to the mode of operation. For example in CE mode the input current is base current and output current is emmiter current which is (β+1) times amplified. The drop of this current across the load voltage is the output signal voltage. But a JFET is a voltage controlled device. The chalnnel conductance is determned by the voltage supplied at the gate terminal and depending on this the drain current flows. MOSFET is one kind of voltage controlled device like JFET where there is metal oxide in between the gate and the channel. Depending on the voltage supplied on the gate terminal a voltahe is 'induced' by electrostatic induction in the isolated channel. The channel therefore behaves as a capacitor where due to the voltage some charges are induced. These charges shrink or extend the effective chanel width. For example in Enhancement Mosfet the channel width effectively increases and in depletion mosfet it decreases. Depending on this the drain to source current increases or decreasesA BJT is a bipolar transistor in the sense that there are two types of charge carriers in them. In npn trnsistor the primary carrier in the hole and in pnp the electron. In JFET there is only one type of carrier. In n-channel case the carrier is elctron and in p-channel hole. So JFET is unipolar in that sense.
What is btj transistors?
They are NPN and PNP. BJT mean bipolar junction transistors. there are two P-N junctions in BJT transisters.
Why FET produces less noise than BJT?
because the fet is made out of carbon metal oxide and the bjt is made out of silicon or germanium
Is BJT is a current control device or voltage control device?
transistor is a current controlled device. as the current flows through the base of the transistor , it works like a close switch.
Why FET called current controlled device?
BJT is a current controlled device because its output current is dependent upon the current in the base while for FET it is controlled by the voltage at the gate terminal of the transistor. BJT is a current controlled device because its base current is not zero while for a FET the gate current is zero
Why bjt is called current controlled current device?
Because the operation of the transistor is determined by the current at the base. the principle equations of BJT operation are: Ic = h*Ib ,and Ie=Ib+Ic thus device operation is controlled by the input current.
What are the example current controlled device?
Bipolar junction transistor(BJT)
What is the meaning of voltage control device and current control device y they call like this?
In vcd, input voltage controls the output current.e.g.jfet In ccd , input current controls the output current. e.g. bjt
What are current controllable devices?
BJT is a example for current controll device. And JFET is a voltage controlled device.
What is bjt and jfet?
BJT is Bipolar junction transistor FET is Field effect Transistor It is a current controlled device It is voltage controlled device
Difference between bjt and ujt?
UJT is the voltage controlled device.in which only one mejority carriers are responsible for current flowing. UJT is one junction transistor and it is three terminal emitter and two base. BJT is the current controlled device. in which both mejority and minority carrier are responsiblefor current flowing. this type of transistor consists of two junction and three terminal these are : emitter , base , collector.
Why BJT is called bipolar device and FET an unipolar device?
FETs can be called UNIPOLAR devices because the charge carriers that carry the current through the device are all of the same type i.e. either holes or electrons, but not both. This distinguishes FETs from the bipolar devices in which both holes and electrons are responsible for current flow in any one device.
What is the difference between jfet and bjt?
FET's (field effect transistors) are unipolar devices because unlike BJT's that use both electron and hole current, they operate only with one type of charge carrier. BJT is a current-controlled device; that is the base current controls the amount of collector current. FET is a voltage-controlled device, where voltave between two of the terminals (gate and source) controls the current through the device. BJT's have a low input impedance ( ~1k -3k ohms), while FET's have a very high input impedance (~10^11 ohms). Consequently FET's have a lower power consumption. BJT's produce more noise than FET's . FET's have a slower switching speed . BJT's are subject to thermal runway while FET's are immune to this problem. BJT's have a higher cutoff frequencey and a higher maximum current then FET's. FET's are easy to fabricate in large scale and have higher element density the BJT's.
What is FET?
FET is abbreviation of Field Effect Transistor. This is a transistor in which current is controlled by voltage only and no current is drawn. It is a high input impedence device and is used in computers, telecommunication and control circuits. This transistor is better in certain parameters as compared to BJT, that is Bipolar Junction Transistor.
Why bjt is bipolar?
Bjt is bipolar because in bjt the conduction of current is due to the electrons as well as holes
