As with any solid state device the ratings vary greatly depending on the manufacture. For exact statistic consult the component manufacturer.
For FET:
A gate length of 1µm limits the upper frequency to about 5 GHz, 0.2µm to about 30 GHz.
For BJT:
??? could not find a general limit
The bandwidth of a Field-Effect Transistor (FET) is generally larger than that of a Bipolar Junction Transistor (BJT) due to the differences in their operating principles. FETs operate using electric fields to control current, leading to lower capacitance and faster switching speeds. In contrast, BJTs rely on charge carrier injection and recombination, which introduces delays that limit their frequency response. As a result, FETs can achieve higher frequency operation and greater bandwidth compared to BJTs.
The normal operating conditions of a transistor typically involve it being in one of its active regions, such as the active region for bipolar junction transistors (BJTs) or the saturation region for field-effect transistors (FETs). For BJTs, this means the base-emitter junction is forward-biased while the collector-base junction is reverse-biased. For FETs, it involves applying a sufficient gate-source voltage to allow current to flow between the drain and source. Under these conditions, the transistor can amplify signals or switch them effectively.
Transistor connections are commonly referred to as terminals. For bipolar junction transistors (BJTs), the three terminals are called the emitter, base, and collector. In field-effect transistors (FETs), the terminals are called the source, gate, and drain. These connections are essential for the transistor's operation in amplifying or switching electronic signals.
A variable transistor is a type of transistor whose characteristics can be adjusted, typically to control the flow of current or voltage in a circuit. This adjustment can be achieved through various means, such as changing gate voltage in field-effect transistors (FETs) or altering the biasing conditions in bipolar junction transistors (BJTs). Variable transistors are often used in applications like amplifiers, oscillators, and signal modulation, allowing for dynamic control over electronic signals.
A transistor is an electronic component that has three terminals and is made of semiconductor material. It is used to amplify or switch electronic signals and power, playing a crucial role in modern electronic devices. Transistors can be found in various configurations, such as bipolar junction transistors (BJTs) and field-effect transistors (FETs).
The bandwidth of a Field-Effect Transistor (FET) is generally larger than that of a Bipolar Junction Transistor (BJT) due to the differences in their operating principles. FETs operate using electric fields to control current, leading to lower capacitance and faster switching speeds. In contrast, BJTs rely on charge carrier injection and recombination, which introduces delays that limit their frequency response. As a result, FETs can achieve higher frequency operation and greater bandwidth compared to BJTs.
The normal operating conditions of a transistor typically involve it being in one of its active regions, such as the active region for bipolar junction transistors (BJTs) or the saturation region for field-effect transistors (FETs). For BJTs, this means the base-emitter junction is forward-biased while the collector-base junction is reverse-biased. For FETs, it involves applying a sufficient gate-source voltage to allow current to flow between the drain and source. Under these conditions, the transistor can amplify signals or switch them effectively.
The field-effect transistor (FET) is a transistor that relies on an electric field to control the shape and hence the conductivity of a channel of one type of charge carrier in a semiconductor material. FETs are sometimes called unipolar transistors to contrast their single-carrier-type operation with the dual-carrier-type operation of bipolar (junction) transistors (BJT). The concept of the FET predates the BJT, though it was not physically implemented until after BJTs due to the limitations of semiconductor materials and the relative ease of manufacturing BJTs compared to FETs at the time.
Transistor connections are commonly referred to as terminals. For bipolar junction transistors (BJTs), the three terminals are called the emitter, base, and collector. In field-effect transistors (FETs), the terminals are called the source, gate, and drain. These connections are essential for the transistor's operation in amplifying or switching electronic signals.
The two main types of transistors are bipolar junction transistors (BJTs) and field-effect transistors (FETs). BJTs operate by controlling the flow of current via two types - NPN and PNP. FETs control current flow using an electrical field, with types including MOSFETs and JFETs.
Sort of. The Bipolar Junction Transistor, or BJT, is a type of transistor. But the term transistor applies to a much wider family of components than just the Standard BJT. A rough list of the other common types of transistors includes:Field effect transistors, or FETs, including both Junction types and Metal-oxide Semiconductor types: JFETs and MOSFETs. and also UJTs or unijunction transistors.In a basic electronics course, though, if you say just 'transistors' it is assumed you mean BJTs.
FET has very high input impedanceBJT has very low input impedance
A variable transistor is a type of transistor whose characteristics can be adjusted, typically to control the flow of current or voltage in a circuit. This adjustment can be achieved through various means, such as changing gate voltage in field-effect transistors (FETs) or altering the biasing conditions in bipolar junction transistors (BJTs). Variable transistors are often used in applications like amplifiers, oscillators, and signal modulation, allowing for dynamic control over electronic signals.
A transistor is an electronic component that has three terminals and is made of semiconductor material. It is used to amplify or switch electronic signals and power, playing a crucial role in modern electronic devices. Transistors can be found in various configurations, such as bipolar junction transistors (BJTs) and field-effect transistors (FETs).
Field Effect Transistor A: basically a silicon bar where the conduction is controlled by a field since there is no connection to the gate the impedance is very high
FETs (Field-Effect Transistors) are generally less noisy than BJTs (Bipolar Junction Transistors) because they operate using an electric field to control current flow, which results in lower thermal noise and reduced flicker noise. FETs have higher input impedance, leading to lower current draw and consequently less thermal agitation of charge carriers. Additionally, the absence of minority carrier injection in FETs minimizes noise generation compared to BJTs, which rely on charge carriers that can introduce more noise.
A transistor is composed of semiconductor materials, typically silicon or germanium, which are doped with impurities to create regions with different electrical properties. It generally consists of three layers: the emitter, base, and collector in bipolar junction transistors (BJTs), or two regions called the source and drain in field-effect transistors (FETs). These layers form p-type and n-type regions, allowing the transistor to control electrical current flow. Additional components like metal contacts and insulating layers may also be present in the device structure.