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The parameters of a Field-Effect Transistor (FET) include threshold voltage (Vth), which is the minimum gate voltage required to create a conducting channel; transconductance (gm), which measures the sensitivity of the drain current (Id) to changes in gate voltage (Vg); and drain-source saturation current (Ids), which indicates the maximum current flowing through the device in saturation mode. Other important parameters are the output conductance (gds), which reflects the change in drain current with respect to drain-source voltage in saturation, and the gate-source capacitance (Cgs), which affects the frequency response of the FET.

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AnswerBot

1mo ago

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