The potential across a pn junction is called potential barrier because majority charge carriers have to overcome this potential before crossing the junction.
Potential barrier is the energy inserted in order to go against the passage of electron.
The forward voltage of a semiconductor junction, silicon or germanium, changes by -2mV for every rise in temperature of 1 degree C, so your friend is correct
The potential barrier on the basis of p-type and n-type semiconductor is the space created by the depletion layer that charged particles need sufficient energy to overcome.
Cut in voltage is the minimum voltage required to overcome the barrier potential. In other words it is like trying to push a large boulder....it may not be possible to push a large boulder by one person but it may be done if 2 or more people try to push it together depending on the size of the boulder.....similarly....the charge carriers in the barrier region have a potential energy of about 0.6V for Silicon and about 0.2V for Germanium. so in order for the diode to conduct, it is required to overcome the potential of the charge carriers in the junction barrier region and hence only if a potential more than that of the barrier potential (cut off voltage) is applied, then electrons flow past the junction barrier and the diode conducts.
Yes, the barrier potential in a semiconductor diode is temperature dependent. As temperature increases, the barrier potential decreases due to changes in the band gap energy and carrier density, leading to increased leakage current. Conversely, as temperature decreases, the barrier potential increases, reducing the leakage current.
barrier potential P0=(kT/q)*ln(Na*Nd/Ni^2) when T ↑, P0↑.
When the temperature increases, the barrier potential in a semiconductor diode decreases. This is due to the increase in carrier density at higher temperatures, which results in more charge carriers being available to pass through the barrier. Ultimately, this leads to a lower resistance across the diode and a decrease in the potential barrier.
The barrier potential of a germanium diode typically decreases with increasing temperature due to the increase in intrinsic carrier concentration. At room temperature (around 300K), the barrier potential is usually around 0.3-0.4V for a germanium diode.
The barrier potential may depend on the exact material; but you can't normally change that. It may also depend on temperature.Also, such a barrier potential is not fixed at some value (like 0.7 V); however, it's often close enough that you can consider it to be constant. But actually, the barrier potential depends on the current. At higher currents, the potential is slightly higher.
The potential across a pn junction is called potential barrier because majority charge carriers have to overcome this potential before crossing the junction.
The typical value of the barrier potential for a germanium diode is around 0.3 to 0.4 volts. This barrier potential is the voltage required to overcome the potential barrier at the junction of the diode and allow current flow in the forward direction.
Breakdown voltage is far greater than barrier potential. silicon:- break-down voltage :- 5v - 450 v barrier potential ;- 0.5v to 0.7 V
The potential barrier of a diode is caused by the movement of electrons to create holes. The electrons and holes create a potential barrier, but as this voltage will not supply current, it cannot be used as a voltage source.
Potential barrier of silicon is 0.7, whereas potential barrier of germanium is 0.3
Barrier
The energy barrier is the minimum amount of energy required for a chemical reaction to occur. Ignition temperature is the minimum temperature at which a substance will ignite and sustain combustion. The energy barrier must be overcome for the substance to reach its ignition temperature and undergo combustion.